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High-Quality A-Si Films Prepared by the Direct Photo-Cvd Method

Published online by Cambridge University Press:  25 February 2011

S. Nakano
Affiliation:
Functional Materials Research Center, SANYO Electric Co., Ltd. 1–18–13 Hashiridani, Hirakata City, Osaka, Japan
K. Wakisaka
Affiliation:
Functional Materials Research Center, SANYO Electric Co., Ltd. 1–18–13 Hashiridani, Hirakata City, Osaka, Japan
M. Kameda
Affiliation:
Functional Materials Research Center, SANYO Electric Co., Ltd. 1–18–13 Hashiridani, Hirakata City, Osaka, Japan
M. Isomura
Affiliation:
Functional Materials Research Center, SANYO Electric Co., Ltd. 1–18–13 Hashiridani, Hirakata City, Osaka, Japan
T. Matsuyama
Affiliation:
Functional Materials Research Center, SANYO Electric Co., Ltd. 1–18–13 Hashiridani, Hirakata City, Osaka, Japan
N. Nakamura
Affiliation:
Functional Materials Research Center, SANYO Electric Co., Ltd. 1–18–13 Hashiridani, Hirakata City, Osaka, Japan
S. Tsuda
Affiliation:
Functional Materials Research Center, SANYO Electric Co., Ltd. 1–18–13 Hashiridani, Hirakata City, Osaka, Japan
M. Ohnishi
Affiliation:
Functional Materials Research Center, SANYO Electric Co., Ltd. 1–18–13 Hashiridani, Hirakata City, Osaka, Japan
Y. Kuwano
Affiliation:
Functional Materials Research Center, SANYO Electric Co., Ltd. 1–18–13 Hashiridani, Hirakata City, Osaka, Japan
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Abstract

A high-efficiency integrated-type a-Si solar cell submodule with a size of 10cm × 10cm has been fabricated and a total area efficiency of 9.6% is obtained by using a high-quality p-layer doped with B(CH3)3 We have developed an advanced direct photo-CVD method. High-quallt” a-SI films with low tail characteristic energy and low light-induced degradation is prepared by this method. We have also studied the role of Si-H2 bonds on the light-induced effect. The result implies that Si-H bonds stabilize the defect states, resulting in a large light-induced degradation.

Type
Research Article
Copyright
Copyright © Materials Research Society 1989

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References

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