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Highly reliable passivation layer for a-InGaZnO thin-film transistors fabricated using polysilsesquioxane

Published online by Cambridge University Press:  29 January 2014

Juan Paolo Bermundo ,
Yasuaki Ishikawa ,
Haruka Yamazaki ,
Toshiaki Nonaka  and
Yukiharu Uraoka
Juan Paolo Bermundo
Affiliation:
Graduate School of Materials Science, Nara Institute of Science and Technology, 8916-5 Takayama-cho, Ikoma, Nara 630-0192, Japan
Yasuaki Ishikawa
Affiliation:
Graduate School of Materials Science, Nara Institute of Science and Technology, 8916-5 Takayama-cho, Ikoma, Nara 630-0192, Japan
Haruka Yamazaki
Affiliation:
Graduate School of Materials Science, Nara Institute of Science and Technology, 8916-5 Takayama-cho, Ikoma, Nara 630-0192, Japan
Toshiaki Nonaka
Affiliation:
AZ Electronic Materials Manufacturing Japan K.K. 3330 Chihama, Kakegawa-shi, Shizuoka, 437-1412, Japan
Yukiharu Uraoka
Affiliation:
Graduate School of Materials Science, Nara Institute of Science and Technology, 8916-5 Takayama-cho, Ikoma, Nara 630-0192, Japan
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Abstract

Polysilsesquioxane passivation layers were used to passivate bottom gate a-InGaZnO (a-IGZO) thin film transistors (TFT). The a-IGZO TFTs passivated with polysilsesquioxane showed highly stable behavior during positive bias stress, negative bias stress, and negative bias illumination stress. A voltage threshold shift of up to 0.1 V, less than -0.1 V and -2.3 V for positive bias stress, negative bias stress, and negative bias illumination stress, respectively. We also report the effect of reactive ion etching (RIE) on the electrical characteristics of a-InGaZnO (a-IGZO) thin-film transistors (TFT) passivated with the polysilsesquioxane-based passivation layers. We show how post-annealing treatment using two different atmosphere conditions: under O2 ambient and combination of N2 and O2 ambient (20% O2), can be performed to recover the initial characteristics. Furthermore, we present a highly stable novel polysilsesquioxane photosensitive passivation material that can be used to completely circumvent the reactive ion etching effects.

Keywords

passivationoxidephotoconductivity
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1633: Symposium R – Oxide Semiconductors , 2014 , pp. 139 - 144
Copyright
Copyright © Materials Research Society 2014 

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References

REFERENCES

Kamiya, T., Nomura, K., and Hosono, H., Sci. Technol. Adv. Mater., 11, 044305 (2010).CrossRefGoogle Scholar
Nomura, K., Ohta, H., Takagi, A., Kamiya, T., Hirano, M., and Hosono, H., Nature, 432, 488 (2004).CrossRefGoogle Scholar
Park, J. S., Maeng, W.-J., Kim, H.-S., and Park, J.-S., Thin Solid Films, 6, 1679 (2012).CrossRefGoogle Scholar
Park, J.-S., Kim, T.-W., Stryakhilev, D., Lee, J.-S.. An, S.-G., Pyo, Y.-S, Lee, D.-B, Mo, Y. G., Jin, D.-U. and Chung, H. K., Appl. Phys. Lett., 95, 013503 (2009)CrossRefGoogle Scholar
Fortunato, E., Barquinha, P., and Martins, R., Adv. Mater., 24, 2945 (2012)CrossRefGoogle Scholar
Kang, D. H., Lim, H., Kim, C. J., Song, I. H., Park, J. C., and Park, Y. S., Appl. Phys. Lett., 90, 192101 (2007).CrossRefGoogle Scholar
Lee, K.-H., Jung, J. S., Son, K. S., Park, J. S., Kim, T. S., Choi, R., Jeong, J. K., Kwon, J.-Y., Koo, B., and Lee, S., Appl. Phys. Lett., 95, 232106 (2009).CrossRefGoogle Scholar
Park, J.-S., Jeong, J. K., Chung, H.-J., Mo, Y.-G., and Kim, H. D., Appl. Phys. Lett., 92, 072104 (2008).CrossRefGoogle Scholar
Jeong, J. K., Yang, H. W., Jeong, J. H., Mo, Y.-G., and Kim, H. D., Appl Phys. Lett., 93, 123508 (2008).CrossRefGoogle Scholar
Mativenga, M., Choi, J. W., Hur, J. H., Kim, H. J., and Jang, J., Journ. of Info. Disp., 12, 47 (2011).CrossRefGoogle Scholar
Ahn, C. H., Senthil, K., Cho, H. K., Lee, S. Y., Nature Sci. Rep., 3, 2737 (2013)Google Scholar
Choi, S.-H., and Han, M.-K., IEEE Electron Device Lett., 33, 396 (2012).CrossRefGoogle Scholar
Arai, T., Morosawa, N., Tokunaga, K., Terai, Y., Fukumoto, E., Fujimori, T., Nakayama, T., Yamaguchi, T. and Sasaoka, T., SID Symposium Digest of Tech. Papers, 41, 1033 (2010).CrossRefGoogle Scholar
Choi, S.-H., Jang, J.-H., Jang-Joo, K., and Han, M.-K., IEEE Elect. Dev. Lett., 33, 381 (2012)CrossRefGoogle Scholar
Bermundo, J. P., ishikawa, Y., Yamazaki, H., Nonaka, T., and Uraoka, Y., ECS Journal of Solid Stat. Sci and Tech. (2013) (in press)Google Scholar
Barney, R. H., Itoh, M., Sakakibara, A., and Suzuki, T., Chem. Rev., 95, 1409 (1995).Google Scholar
Yuan, Q., Yin, G., and Zhaoyuan, N.: Plasma Sci. and Technol., 15, 86 (2013).CrossRefGoogle Scholar
Chowdhury, M.D.H, Migliorato, P., and Jang, J., Appl. Phys. Lett., 97, 173506 (2010).CrossRefGoogle Scholar