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Highly Efficient Microcrystalline Silicon Solar Cells Deposited from a Pure SiH4 Flow

Published online by Cambridge University Press:  01 February 2011

Menno van den Donker ,
B. Rech ,
R. Schmitz ,
J. Klomfass ,
G. Dingemans ,
F. Finger ,
L. Houben ,
W.M.M. Kessels  and
M.C.M. van de Sanden
Menno van den Donker
Affiliation:
[email protected], Forschungszentrum Juelich GmbH, Insitute of Photovoltaics, Leo.Brandtstrasse 2, Juelich, N/A, 52425, Germany, 00492461614855, 00492461613735
B. Rech
Affiliation:
[email protected], Forschungszentrum Juelich GmbH, IPV, Juelich, N/A, 52425, Germany
R. Schmitz
Affiliation:
[email protected], Forschungszentrum Juelich GmbH, IPV, Juelich, N/A, 52425, Germany
J. Klomfass
Affiliation:
[email protected], Forschungszentrum Juelich GmbH, IPV, Juelich, N/A, 52425, Germany
G. Dingemans
Affiliation:
[email protected], Forschungszentrum Juelich GmbH, IPV, Juelich, N/A, 52425, Germany
F. Finger
Affiliation:
[email protected], Forschungszentrum Juelich GmbH, IPV, Juelich, N/A, 52425, Germany
L. Houben
Affiliation:
[email protected], Forschungszentrum Juelich GmbH, IFF, Juelich, N/A, 52425, Germany
W.M.M. Kessels
Affiliation:
[email protected], TU Eindhoven, Applied Physics, PO Box 513, Eindhoven, N/A, 5600MB, Netherlands
M.C.M. van de Sanden
Affiliation:
[email protected], TU Eindhoven, Applied Physics, PO Box 513, Eindhoven, N/A, 5600MB, Netherlands
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Abstract

The effect of conventional process parameters on the deposition of μc-Si:H solar cells is reviewed. Then, an approach to solar cell optimization is presented in which hidden, internal parameters are adjusted rather than conventional, external process parameters. The investigation focuses on deposition at low H2 dilution ratio and low total gas flow. A hidden parameter is identified through time resolved optical emission spectroscopy on SiH emission: Transient depletion of the SiH4 source gas leads to uncontrolled deposition conditions during the first 90 s after plasma ignition. There hardly is any effect on plasma properties and deposited film properties for the remainder of deposition after the transient depletion phase. As demonstrator a 9.5 % efficient single junction μc-Si:H solar cell was deposited from a pure SiH4 flow. A reinterpretation of the role of H2 dilution is discussed.

Keywords

plasma-enhanced CVD (PECVD) (deposition)nucleation & growthphotovoltaic
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 910: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology – 2006 , 2006 , 0910-A26-01
Copyright
Copyright © Materials Research Society 2006

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