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High Temperature Thermoelectric Properies of LnPdX (Ln = lanthanide; X = Sb, Bi) Ternary Compounds

Published online by Cambridge University Press:  01 February 2011

Takeyuki Sekimoto ,
Ken Kurosaki ,
Hiroaki Muta  and
Shinsuke Yamanaka
Takeyuki Sekimoto
Affiliation:
[email protected], Osaka University, Yamadaoka 2-1, Suita, Osaka, 565-0871, Japan
Ken Kurosaki
Affiliation:
[email protected], Japan
Hiroaki Muta
Affiliation:
[email protected], Japan
Shinsuke Yamanaka
Affiliation:
[email protected], Japan
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Abstract

Ternary compounds LnPdX (Ln = lanthanide elements of La, Gd, Er; X = Sb, Bi) were prepared by a spark plasma sintering (SPS) technique. The crystal structure of LaPdSb and GdPdSb was confirmed to be a hexagonal ZrBeSi-type structure and different from the other compounds with a MgAgAs-type structure. The electrical resistivities ρ of LaPdSb and GdPdSb indicate the metallic or semimetallic characteristics, while those of ErPdSb and LnPdBi indicate semiconductor characteristics. From the ln ρ − 1/T plot, the band gap energies E g were estimated to be 0.28, 0.053, 0.081, and 0.049 eV for ErPdSb, LaPdBi, GdPdBi, and ErPdBi, respectively. All the samples have positive thermoelectric powers S above room temperature. The largest power factor S 2/ρ was obtained as 49.5 μW/K2 cm at 327 K for LaPdSb. From the Hall effect measurements on ErPdX, the carrier concentration n of ErPdSb and ErPdBi were obtained as 5.9×1018 and 3.21×1019 cm−3 at room temperature, respectively. It is considered that the difference of n at room temperature is mainly due to the magnitude of the band gap energy.

Keywords

thermoelectricityelectrical propertiesHall effect
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 886: Symposium F – Materials and Technologies fore Direct Thermal-to-Electric Energy Conversion , 2005 , 0886-F08-04
Copyright
Copyright © Materials Research Society 2006

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References

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