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High Power AlGaN/GaN Schottky Barrier Diode with 1000 V Operation

Published online by Cambridge University Press:  01 February 2011

Seikoh Yoshida ,
Nariaki Ikeda ,
Jiang Li ,
Takahiro Wada ,
Hiroshi Kambayashi  and
Hironari Takehara
Seikoh Yoshida
Affiliation:
[email protected], Furukawa Electric Co., Ltd., Yokohama R& D Laboratories, 2-4-3, Okano, Nishi-ku, Yokohama, Kanagawa, 220-0073, Japan, +81-45-311-1218, +81-45-316-6374
Nariaki Ikeda
Affiliation:
[email protected]
Jiang Li
Affiliation:
[email protected]
Takahiro Wada
Affiliation:
Yokohama R&D Laboratories, The Furukawa Electric Co., Ltd 2-4-3, Okano, Nishi-ku, Yokohama, 220-0073, Japan
Hiroshi Kambayashi
Affiliation:
[email protected]
Hironari Takehara
Affiliation:
Yokohama R&D Laboratories, The Furukawa Electric Co., Ltd 2-4-3, Okano, Nishi-ku, Yokohama, 220-0073, Japan
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Abstract

We investigated an AlGaN/GaN Schottky barrier diode (SBD) with a field plate structure for a high breakdown voltage. The AlGaN/GaN heterostructure was grown by MOCVD. The AlGaN buffer was grown on the Si (111) substrate and Al0.25Ga0.75N (25 nm)/ GaN (1000 nm) was grown on the buffer layer. The AlGaN/GaN heterostructure without any crack was obtained. After that, a Schottky barrier diode was fabricated using an AlGaN/GaN heterostructure. In order to obtain a high breakdown voltage, a gate field plate structure was used. SiO2 was formed on the AlGaN layer using a plasma chemical vapor deposition. The Schottky electrode of Ni/Au was partially deposited on the SiO2 film towards the ohmic region. The length of field plate structure was also changed to investigate the effect. Ti/Al-silicide was used for an ohmic electrode of SBD. The contact resistance of ohmic electrodes was 8E-6 ohmcm2.

The current-voltage characteristics of an AlGaN/GaN SBD were measured. The reverse breakdown voltage of the diode was also over 1000 V and the reverse leakage current was below 1.5E-6 A/mm.

Keywords

III-Vnitrideelectrical properties
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 892 , 2005 , 0892-FF05-02
Copyright
Copyright © Materials Research Society 2006

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References

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