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High Performance HgCdTe-Detectors Grown by Molecular Beam Epitaxy

Published online by Cambridge University Press:  10 February 2011

R. D. Rajavel
Affiliation:
Hughes Rtsearch Laboratories, Malibu, CA
D. M. Jamba
Affiliation:
Hughes Rtsearch Laboratories, Malibu, CA
J. E. Jensen
Affiliation:
Hughes Rtsearch Laboratories, Malibu, CA
O. K. Wu
Affiliation:
Hughes Rtsearch Laboratories, Malibu, CA
C. A. Cockrum
Affiliation:
Santa Barbara Research Center, Goleta, CA
J. A. Wilson
Affiliation:
Santa Barbara Research Center, Goleta, CA
E. A. Patten
Affiliation:
Santa Barbara Research Center, Goleta, CA
K. Kosai
Affiliation:
Santa Barbara Research Center, Goleta, CA
J. Rosbeck
Affiliation:
Santa Barbara Research Center, Goleta, CA
P. Goetz
Affiliation:
Santa Barbara Research Center, Goleta, CA
G. Venzor
Affiliation:
Santa Barbara Research Center, Goleta, CA
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Abstract

Molecular beam epitaxy (MBE) offers benefits such as the capability for growth of compositionally-tailored heterostructures and in-situ doping of HgCdTe alloys. These capabilities were applied to the growth of long wave infrared unispectral focal plane arrays (FPA) with 480×4 elements. The detectivity (D*) map of the FPA demonstrated performance that was higher than the specification value, with no defective channels. Two-color detectors with the n-p-n architecture, for the simultaneous detection of two closely spaced bands in the midwave infrared spectrum were also grown by MBE. These devices exhibited sharp turn-off and turn-on in both bands. The quantum efficiency was greater than 70% and average R°A values exceeded 1×106 Ω-cm2 in both bands. These result demonstrate that high performance HgCdTe devices can be grown by MBE.

Type
Research Article
Copyright
Copyright © Materials Research Society 1997

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References

REFERENCES

1. Rajavei, R. D., Jamba, D.M., Wu, O.K., Roth, J.A., Brewer, P.D., Jensen, J.E., Cockrum, C.A., Venzor, G.M., and Johnson, S.M., J. Electron. Materials 28 1410 (1996).Google Scholar
2. Arias, J., paper presented at the Fall 1996 MRS Meeting, Symposium O, Boston, MA, Dec. 2–6, 1996.Google Scholar
3. de Lyon, T.J., Rajavel, R.D., Jensen, J.E., Wu, O.K., Johnson, S.M., Cockrum, C.A., and Venzor, G.M., J. Electron. Materials 28, 1410 (1996).Google Scholar
4. Cockrum, C.A., Johnson, S.M., Petrowoski, P.G., Venzor, G.M., Rajavel, R.D., Jensen, J.E., Wu, O.K., Benson, J.D., Brown, J.C., Phu, S.D., and O'Neill, J.J., Proceeding of IRIS Specialty Group on Infrared Detectors, NIST, Boulder CO, July 1996.Google Scholar
5. Kamath, G.S. and Wu, O.K., U.S. Patent 5,028,561 (1991).Google Scholar
6. Rajavel, R.D., Wu, O.K., Jamba, D.M. and de Lyon, T.J., J. Vac. Sci. Technol. B14, 2362 (1996).Google Scholar
7. Wu, O.K., Rajavel, R.D., de Lyon, T.J., Jensen, J.E., Jack, M., Kosai, K., Chapman, G., Sen, S., Baumgratz, B., Walker, B., and Johnson, B., to be submitted to J. Electron. Mater.Google Scholar
8. Hansen, G.L., Schmit, J.L., and Casselman, Y.N., J. Appl. Phys. 53, 7099 (1982).Google Scholar