Hostname: page-component-586b7cd67f-l7hp2 Total loading time: 0 Render date: 2024-11-28T03:56:09.592Z Has data issue: false hasContentIssue false
  • English
  • Français

HIGH FREQUENCY TOP-GATED GRAPHENE RF AMBIPOLAR FETs USING LARGE-AREA CVD GRAPHENE AND ADVANCED DIELECTRICS

Published online by Cambridge University Press:  17 March 2011

Osama M. Nayfeh  and
Madan Dubey
Osama M. Nayfeh
Affiliation:
United States Army Research Laboratory, Sensors and Electron Devices Directorate, 2800 Powder Mill Road, Adelphi, MD 20783, USA
Madan Dubey
Affiliation:
United States Army Research Laboratory, Sensors and Electron Devices Directorate, 2800 Powder Mill Road, Adelphi, MD 20783, USA
Get access

Abstract

Ambipolar top-gated field effect transistors (FETs) based on large area Cu catalyzed CVD-grown monolayer graphene interfaced to advanced dielectrics have been constructed and examined both for their material and electrical qualities. Interfacing of the graphene with novel insulators/substrates could be tailored for the particular application and provide for enhanced device functionality. In contrast to graphene FETs using SiO2-based top-gate dielectric, which show asymmetric electron/hole mobility (with larger hole mobility), and Dirac point shifted to positive levels, FETs constructed using advanced AlN show Dirac point almost near neutral levels and near symmetric electron/hole mobility. The DP is shifted likely due to compensation of the intrinsic p-type doping by n-type doping introduced by the AlN deposition and potentially via a contribution of polarization-induced carrier density. Finally, we demonstrate a top-gated graphene FET with the first observation of RF operation with GHz cut-off frequency based on large area CVD graphene.

Keywords

Csemiconductingelectronic material
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1283: Symposium B – Carbon-Based Electronic Devices—Processing, Performance and Reliability , 2011 , mrsf10-1283-b03-08
Copyright
Copyright © Materials Research Society 2011

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Novoselov, K. S., Geim, A. K., Morozov, S. V., Jiang, D., Zhang, Y., Dubonos, S. V., Grigorieva, I. V., and Firsov, A. A., “Electric field effect in atomically thin carbon films,” Science, vol. 306, no. 5696, pp. 666–669, Oct. 2004.Google Scholar
2. Schwierz, F., “Graphene Transistors,” Nature Nanotechnology, vol. 5, pp. 487–496, July, 2010.10.1038/nnano.2010.89Google Scholar
3. Geim, K. and Novoselov, K. S., “The rise of graphene,” Nature Materials, vol. 6, no. 3, pp. 183–191, Mar. 2007.10.1038/nmat1849Google Scholar
4. Pregaldiny, F., Kammerer, J.-B., and . Lallement, C., “Compact Modeling and Applications of CNTFETs for Analog and Digital Circuit Design,” in Proceedings of IEEE International Conference on Electronic, Circuits, and Systems, pp. 130–133, 2006.Google Scholar
5. Wang, H., Nezich, D., Kong, J., Palacios, T., “Graphene Frequency Multipliers,” IEEE Electron Device Letters, vol. 30, no. 5, 2009.Google Scholar
6. Harada, N., Yagi, K., Sato, S., and Yokoyama, N., “A polarity–controllable graphene inverter,” Applied Physics Letters, vol. 96, 012102, 2010.Google Scholar
7. Sordan, R., Traversi, F., and Russo, V., “Logic gates with a single graphene transistor,” Applied Physics Letters, vol. 94, 073305, 2009.Google Scholar
8. Nayfeh, O.M., Kilpatrick, S., and Dubey, M., in IEEE Device Research Conference, pp. 83–84, 2010 Google Scholar
9. Meric, I., Baklitskaya, N., Kim, P., and Shepard, K. L., “RF performance of top gated, zero-bandgap graphene field-effect transistors,” in IEDM Tech. Dig., 2008, pp. 1–4, 2008.Google Scholar
10. Lin, Y., Jenkins, K. A., Valdes-Garcia, A., Small, J. P., Farmer, D. B., and Avouris, P., “Operation of graphene transistors at gigahertz frequencies,” Nano Letters, vol. 9, no. 1, pp. 422–426, Jan. 2009.Google Scholar
11. Lin, Y., Chiu, H.-Y., Jenkins, K.A., Farmer, D.B., Avouris, P., and Valdes-Garcia, A., “Dual-Gate Graphene FETs with ft of 50 GHz,” IEEE Electron Device Letters, vol. 31, no. 1, January 2010.Google Scholar
12. Moon, J. S., Curtis, D., Hu, M., Wong, D., McGuire, C., Campbell, P. M., Jernigan, G., Tedesco, J. L., VanMil, B., Myers-Ward, R., Eddy, C. Jr., and Gaskill, D. K., “Epitaxial-Graphene RF Field-Effect Transistors on Si-Face 6H-SiC Substrates,” IEEE Electron Device Letters, vol. 30, no. 6, June 2009.10.1109/LED.2009.2020699Google Scholar
13. Dambrine, G., Cappy, A., Heliodore, D., and Playez, E., “A New Method for Determining the FET Small-Signal Equivalent Circuit,” IEEE Transactions on Microwave Theory, vol. 36, no. 7, pp. 1151–1159, July 1988.Google Scholar
14. Minasian, R. A., “Simplified GaAs MESFET model to 10 GHz,” Electron. Letters, vol. 13, no. 8, pp. 549–541, 1977.Google Scholar