Hostname: page-component-78c5997874-m6dg7 Total loading time: 0 Render date: 2024-11-09T15:44:16.488Z Has data issue: false hasContentIssue false
  • English
  • Français

High Frequency Capacitance Measurements On Metal-Insulator-Semiconductor Structures In Thermal Non-Equilibrium Condition

Published online by Cambridge University Press:  10 February 2011

M. Sadeghi ,
A. Jauhiainen ,
B. Liss ,
E. Ö. Sveinbjörnsson  and
O. Engström
M. Sadeghi
Affiliation:
Department of Solid State Electronics, Chalmers University of Technology, S–412 96 Göteborg, Sweden
A. Jauhiainen
Affiliation:
Department of Solid State Electronics, Chalmers University of Technology, S–412 96 Göteborg, Sweden
B. Liss
Affiliation:
Department of Solid State Electronics, Chalmers University of Technology, S–412 96 Göteborg, Sweden
E. Ö. Sveinbjörnsson
Affiliation:
Department of Solid State Electronics, Chalmers University of Technology, S–412 96 Göteborg, Sweden
O. Engström
Affiliation:
Department of Solid State Electronics, Chalmers University of Technology, S–412 96 Göteborg, Sweden
Get access

Abstract

We simulate the charge carrier traffic between the energy bands and the interface states in structures like Al/SiO2/6H-SiC, Al/diamond/Si and Al/SIPOS/Si to explain their high frequency capacitance-voltage behavior. The structures have in common that traditional electrical measurement techniques performed at room temperature are strongly influenced by non-equilibrium carrier conditions at the insulator-semiconductor interface. This can result in large errors in the interface data extracted from such studies when thermal equilibrium conditions are assumed. In this work, high frequency capacitance-voltage data are compared to numerical simulations which include such thermal non-equilibrium conditions to enable more accurate estimates of interface state parameters in such structures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 483: Symposium E – Power Semiconductor Materials & Devices , 1997 , 315
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Casady, J. B. and Johnson, R. W., Solid State Electr. 38, 1409 (1996).Google Scholar
2. Chow, T. P. and Ghezzo, M., Mater. Res. Soc. Symp. Proc. 423, 9 (1996).Google Scholar
3. Yamada, N., Fuma, H. and Tadano, H., Ins. Phys. Conf. Ser. 142, 737 (1995).Google Scholar
4. Jauhiainen, A., Bengtsson, S. and Engstrbm, O., Mater. Res. Soc. Symp. Proc. 416, 331 (1996); J. Appl. Phys. 82, 4966 (1997).Google Scholar
5. Liss, B. and Engström, O., J. Appl. Phys. 78, 1824 (1995).Google Scholar
6. Ricksand, A. and Engström, O., J. Appl. Phys. 70, 6915 (1991).Google Scholar
7. Liss, B., Jauhiainen, A., Sadeghi, M., and Engström, O. (unpublished).Google Scholar
8. Fox, B. A., Hartsell, M. L., Malta, D. M., Wynands, D. M., Tessmer, G. J., and Dreifus, D. L., Mater. Res. Soc. Symp. Proc. 416, 319 (1996).Google Scholar
9. Jauhiainen, A., Ph.D. thesis, Chalmers University of Technology, Göteborg, Sweden, ISBN 91-7197-575-6 (1997).Google Scholar
10. Sadeghi, M., Liss, B., Sveinbjörnsson, E.Ö., and Engström, O., in Proc. of the International Conf. on SiC, III-nitrides and related materials, Stockholm, Sweden (1997) (in press).Google Scholar