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High Fill Factor a-Si:H Sensor Arrays with Reduced Pixel Crosstalk

Published online by Cambridge University Press:  01 February 2011

Yuriy Vygranenko
Affiliation:
[email protected], ISEL, DEETC, Rua Conselheiro Emidio Navarro, 1, Lisbon, 1950-062, Portugal
A. Sazonov
Affiliation:
[email protected], University of Waterloo, Electrical and Computer Engineering, Waterloo, N2L 3G1, Canada
D. Striakhilev
Affiliation:
[email protected], University of Waterloo, Electrical and Computer Engineering, Waterloo, N2L 3G1, Canada
J. H. Chang
Affiliation:
[email protected], Carestream Health, Rochester, NY, 14652-3487, United States
G. Heiler
Affiliation:
[email protected], Carestream Health, Rochester, NY, 14652-3487, United States
J. Lai
Affiliation:
[email protected], Carestream Health, Rochester, NY, 14652-3487, United States
T. Tredwell
Affiliation:
[email protected], Carestream Health, Rochester, NY, 14652-3487, United States
A. Nathan
Affiliation:
[email protected], UCL, London Centre for Nanotechnology, London, WC1H OAH, United Kingdom
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Abstract

In this paper, we report on low noise, high fill factor amorphous silicon (a-Si:H) image sensor structures for indirect radiography. Two types of the sensor arrays comprising n-i-p photodiodes and m-i-s photosensors have been fabricated. The device prototypes contain 100 × 100 pixels, with a pixel pitch of 139 μm. The active-matrix addressing is provided by low off-current TFTs. The sensors are vertically integrated onto the TFT-backplane, by implementing a 3-μm-thick low-k interlayer dielectric. This dielectric layer serves to reduce the data line capacitance and to planarize underlying topography. The detector was designed for reduced data-line resistance and parasitic coupling. Details of the device design and fabrication, along with sensor performance characteristics, are presented and discussed.

Type
Research Article
Copyright
Copyright © Materials Research Society 2008

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References

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