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High Efficiency Crystallization of Silicon Thin Films Using Continuous Wave Infrared Laser

Published online by Cambridge University Press:  01 February 2011

Naoki Sano ,
Masato Maki ,
Nobuyuki Andoh  and
Toshiyuki Sameshima
Naoki Sano
Affiliation:
[email protected], Hightec Systems Corporation, R&D Center, 3-19-5, Shin Yokohama, Kohoku-ku, Yokohama, Kanagawa, 222-0033, Japan
Masato Maki
Affiliation:
[email protected], Tokyo University of Agriculture and Technology, Koganei, Tokyo, 184-8588, Japan
Nobuyuki Andoh
Affiliation:
[email protected], Tokyo University of Agriculture and Technology, Koganei, Tokyo, 184-8588, Japan
Toshiyuki Sameshima
Affiliation:
[email protected], Tokyo University of Agriculture and Technology, Koganei, Tokyo, 184-8588, Japan
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Abstract

Laser crystallization of silicon thin films on inexpensive glass substrates with a photo-absorption layer of diamond like-carbon (DLC) film was investigated. Scanned near-infrared beam emitted from a continuous wave (CW) laser diode at speed of 30 cm/s with power density of 30 kW/cm2 and wavelength of 940nm was effectively absorbed by DLC films, and changed to thermal energy for heating underlying silicon films with thickness of 50 nm. As a result, crystallization of silicon films was achieved. Raman scattering spectra was measure for the structural analysis of silicon films, and the sharp TO phonon peak at wave number of 520 cm-1 was observed. It shows that silicon films were effectively crystallized using the near-infrared laser diode. On the other hand, no crystallization was observed when the laser diode was directly irradiated to 50-nm-Si/quartz, because silicon has no optical absorption coefficient at 940 nm.

Keywords

laser annealingSiC
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 910: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology – 2006 , 2006 , 0910-A14-02
Copyright
Copyright © Materials Research Society 2006

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