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Heterogeneous Nucleation of Spatially Coherent Damage Structures in Crystalline Silicon with Picosedcond 1.06 μm and 0.53 μm Laser Pulses

Published online by Cambridge University Press:  15 February 2011

R.M. Walser
Affiliation:
Electronics Research Center and The Department of Electrical Engineering, The University of Texas at Austin, Austin, Texas, USA
M.F. Becker
Affiliation:
Electronics Research Center and The Department of Electrical Engineering, The University of Texas at Austin, Austin, Texas, USA
J.G. Ambrose
Affiliation:
Electronics Research Center and The Department of Electrical Engineering, The University of Texas at Austin, Austin, Texas, USA
D.Y. Sheng
Affiliation:
Electronics Research Center and The Department of Electrical Engineering, The University of Texas at Austin, Austin, Texas, USA
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Several types of periodic ripple structures have been observed on the surface of solids that have been laser irradiated with beam intensities near their melting thresholds.1-7 We restrict our attention here to the coherent, onedimensional (RD) gratings induced by linearly polarized beams.3-7 These gratings have a period close to the free space laser wavelength (λ0) for normally incident beams and are normally found in the beam spot near the melt boundary (Fig. 1). The grating lines are always perpendicular to the optical electric field Ei independent of the crystallographic orientation of the sample.

Type
Research Article
Copyright
Copyright © Materials Research Society 1981

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References

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