Hostname: page-component-78c5997874-j824f Total loading time: 0 Render date: 2024-11-03T02:46:15.022Z Has data issue: false hasContentIssue false
  • English
  • Français

Hetero-epitaxial Growth of (1, 0, m+1) One Axis-oriented Bismuth Layered Structured Ferroelectrics Thin Films Directly Crystallized by MOCVD

Published online by Cambridge University Press:  17 March 2011

Norimasa Nukaga ,
Takayuki Watanabe ,
Tomohiro Sakai ,
Toshimasa Suzuki  and
Yuji Nishi
Norimasa Nukaga
Affiliation:
Masayuki Fujimoto1 and Hiroshi Funakubo Department of Innovative and Engineered Materials, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8502, Japan
Takayuki Watanabe
Affiliation:
Masayuki Fujimoto1 and Hiroshi Funakubo Department of Innovative and Engineered Materials, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8502, Japan
Tomohiro Sakai
Affiliation:
Masayuki Fujimoto1 and Hiroshi Funakubo Department of Innovative and Engineered Materials, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8502, Japan
Toshimasa Suzuki
Affiliation:
Masayuki Fujimoto1 and Hiroshi Funakubo Department of Innovative and Engineered Materials, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8502, Japan
Yuji Nishi
Affiliation:
Taiyo Yuden Co., Ltd., 5607-2 Nakamuroda, Haruna-machi, Gunma 370-3347, Japan
Get access

Abstract

Bismuth layered structured ferroelectrics (BLSF) thin films with different number of octahedron number (m-number) were prepared by MOCVD and directly crystallized on the substrates. Directly-crystallized SrBi2Ta2O9 (SBT) (m=2) films on a (111) Pt/Ti/SiO2/Si substrate were ascertained to have a strong (103) one-axis orientation by the X-ray reciprocal space mapping and to be hetero-epitaxially grown on the (111) Pt grains by the TEM observation. Moreover, directly crystallized Bi2VO5.5 (m=1) and Bi4Ti3O12 (m=3) films deposited on the same substrate showed (102) and (104) one-axis preferred orientations, respectively. These orientations are basically the equal ones with SBT (103) orientation because the tilting angle of c-axis from the substrate surface is also about 55°. Therefore, the direct crystallization is one of the important key techniques for orientation control of BLSF films. Moreover, the directly crystallized SBT film deposited on a (111) Ir/TiOx/SiO2/Si substrate at 570 °C by ECR-MOCVD exhibited (103) one-axis orientation, which also originated from the local epitaxial growth on (111)-oriented Ir grains. The remanent polarization (2Pr), and the coercive field (Ec) of this film were 16.1 μC/cm2 and 83 kV/cm at an applied electric field of 360kV/cm, respectively. This Pr value is about 88% of the expected value of (103)-oriented SBT film from both the Pr values of the (116) and (001)-oriented epitaxial films and detailed crystal analysis.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 688: Symposium C – Ferroelectric Thin Films X , 2001 , C2.2.1
Copyright
Copyright © Materials Research Society 2002

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Hironaka, K., Isobe, C., Moon, B. and Hishikawa, S., Jpn. J. Appl. Phys. 40, 680 (2001).Google Scholar
2. Nukaga, N., Mitsuya, M. and Funakubo, H., IEICE Trans. Electron. E84–C, 791 (2001).Google Scholar
3. Mitsuya, M., Nukaga, N. and Funakubo, H., Jpn. J. Appl. Phys. 39, L822 (2000).Google Scholar
4. Nukaga, N., Mitsuya, M. and Funakubo, H., Jpn. J. Appl. Phys. 39, 5496 (2000).Google Scholar
5. Watanabe, T., Funakubo, H. and Saito, K., J. Mater. Res. 16, 303 (2001).Google Scholar
6. Saito, K., Mitsuya, M., Nukaga, N., Yamaji, I., Akai, T. and Funakubo, H., Jpn. J. Appl. Phys. 39, 5489 (2000).Google Scholar
7. Ishikawa, K., Saiki, A. and Funakubo, H., Jpn. J. Appl. Phys. 39, 2102 (2000).Google Scholar
8. Mitsuya, M., Nukaga, N. Saito, K., Osada, M. and Funakubo, H., Jpn. J. Appl. Phys. 40, 3337 (2001).Google Scholar
9. Eshita, T., Yamawaki, H., Miyagaki, S. and Arimoto, Y., Integrated Ferroelectrics. 26, 103 (1999).Google Scholar
10. Shimakawa, Y., Kudo, Y., Nakagawa, Y., Kamiyama, T., Asano, H., and Izumi, F., Appl. Phys. Lett. 74, 1904 (1999).Google Scholar
11. Noguchi, Y., Miyayama, M., and Kudo, T., Appl. Phys. Lett. 77, 3639 (2000).Google Scholar