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Hall Effect Measurement System for Characterization of Doped Single Crystal Diamond

Published online by Cambridge University Press:  07 February 2013

Isil Berkun
Affiliation:
Michigan State University Electrical and Computer Engineering, East Lansing, MI, U.S.A.
Shannon N. Demlow
Affiliation:
Michigan State University Electrical and Computer Engineering, East Lansing, MI, U.S.A.
Nutthamon Suwanmonkha
Affiliation:
Michigan State University Electrical and Computer Engineering, East Lansing, MI, U.S.A.
Timothy P. Hogan
Affiliation:
Michigan State University Electrical and Computer Engineering, East Lansing, MI, U.S.A.
Timothy A. Grotjohn
Affiliation:
Michigan State University Electrical and Computer Engineering, East Lansing, MI, U.S.A. Fraunhofer USA Center for Coatings and Laser Applications, East Lansing, MI, U.S.A
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Abstract

A temperature dependent Hall Effect measurement system with software based data acquisition and control was built and tested. Transport measurements are shown for boron-doped single crystal diamond (SCD) films deposited in a microwave plasma-assisted chemical vapor deposition (MPCVD) reactor. The influence of Ohmic contacts and temperature control accuracy are studied. For a temperature range of 300K-700K IV curves, Hall mobilities and carrier concentrations are presented.

Type
Articles
Copyright
Copyright © Materials Research Society 2013

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References

REFERENCES

Kuo, K.-P. and Asmussen, J., “An experimental study of high pressure synthesis of diamond films using a microwave cavity plasma reactor,” Diamond and Related Materials, vol. 6, pp. 10971105, 1997.10.1016/S0925-9635(97)00018-6CrossRefGoogle Scholar
Demlow, S. N., et al. ., “Dopant Uniformity and Concentration in Boron Doped Single Crystal Diamond Films,” MRS Online Proceedings Library, vol. 1395, pp. mrsf1 1-1395-n03-02, 2012.Google Scholar
ASTM Standard F76, 2008 “Standard Test Methods for Measuring Resistivity and Hall Coefficient and Determining Hall Mobility in Single-Crystal Semiconductors”, ASTM International, West Conshohocken, PA, 2003, DOI: 10.1520/F0076-08 .10.1520/F0076-08CrossRefGoogle Scholar
Ziegler, J. and Nichols, N., “Optimum settings for automatic controllers,” trans. ASME, vol. 64, 1942.Google Scholar
Borst, T. H. and Weis, O., “Electrical characterization of homoepitaxial diamond films doped with B, P, Li and Na during crystal growth,” Diamond and Related Materials, vol. 4, pp. 948953, 1995.10.1016/0925-9635(94)00263-0CrossRefGoogle Scholar
Tsubotaa, T., et al. ., “Surface morphology and electrical properties of boron-doped diamond films synthesized by microwave-assisted chemical vapor deposition using trimethylboron on diamond (100) substrate,” Diamond and Related Materials, vol. 9, pp. 13621368, 2000.10.1016/S0925-9635(00)00254-5CrossRefGoogle Scholar