Hostname: page-component-586b7cd67f-2plfb Total loading time: 0 Render date: 2024-11-24T14:13:09.790Z Has data issue: false hasContentIssue false
  • English
  • Français

Growths of AlInN Single Layers and Distributed Bragg Reflectors for VCSELs

Published online by Cambridge University Press:  07 May 2015

Y. Kozuka ,
K. Ikeyama ,
T. Yasuda ,
T. Takeuchi ,
S. Kamiyama ,
M. Iwaya  and
I. Akasaki
Y. Kozuka
Affiliation:
Faculty of Science and Technology, Meijo University
K. Ikeyama
Affiliation:
Faculty of Science and Technology, Meijo University
T. Yasuda
Affiliation:
Faculty of Science and Technology, Meijo University
T. Takeuchi
Affiliation:
Faculty of Science and Technology, Meijo University
S. Kamiyama
Affiliation:
Faculty of Science and Technology, Meijo University
M. Iwaya
Affiliation:
Faculty of Science and Technology, Meijo University
I. Akasaki
Affiliation:
Faculty of Science and Technology, Meijo University Akasaki Research Center, Nagoya University
Get access

Abstract

We investigated MOVPE growth conditions for AlInN layers with high growth rates and obtained 0.5µm/h with smooth surfaces. We found that short gas mixing time, relatively high growth temperature, and very low In/Al supply ratio were key growth parameters in order to obtain the AlInN layers with high growth rate and smooth surface simultaneously. AlInN/GaN DBRs grown under such growth conditions showed smooth surfaces and a reflectivity of over 99%.

Keywords

crystal growthnitrideepitaxy
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1736: Symposium T – Wide-Bandgap Materials for Solid-State Lighting and Power Electronics , 2014 , mrsf14-1736-t13-08
Copyright
Copyright © Materials Research Society 2015 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Cosendey, Gatien, Castiglia, Antonino et, Appl.Phys. Lett 101, 151113 (2012)CrossRefGoogle Scholar
Feltin, E., Christmann, G. et, Electronics Lett 16th August vol. 43 No.17(2007)Google Scholar
Moser, Pascal, Blasing, Jurgen et, Japanese Journal of Applied Physics 50 (2011)CrossRefGoogle Scholar
Sadler, Thomas C., Kappers, Menno J. et, Phys. Status Solidi C 6, No. S2, S666–S670 (2009)CrossRefGoogle Scholar
Cosendey, Gatien, Jean-François, et, Appl.Phys. Lett 98, 181111 (2011)CrossRefGoogle Scholar
Butte, R., Feltin, E. et, Japanese Journal of Applied Physics Vol. 44, No. 10 (2005)CrossRefGoogle Scholar
Sadler, T.C. et al. . J.CrystalGrowth 314 (2011)Google Scholar