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Growth Temperature Effects on Deep-Levels in Si Grown by Low Temperature Molecular Beam Epitaxy

Published online by Cambridge University Press:  11 February 2011

Sung-Yong Chung ,
Paul R. Berger ,
Z-Q. Fang  and
Phillip E. Thompson
Sung-Yong Chung
Affiliation:
Department of Electrical Engineering, The Ohio State University, Columbus, OH 43210
Paul R. Berger
Affiliation:
Department of Electrical Engineering, The Ohio State University, Columbus, OH 43210 Department of Physics, The Ohio State University, Columbus, OH 43210
Z-Q. Fang
Affiliation:
University Research Center, Wright State University, Dayton, OH 45435, USA
Phillip E. Thompson
Affiliation:
Naval Research Laboratory, Washington, DC 20375–5347, USA
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Abstract

Deep-level transient spectroscopy (DLTS) measurements were performed on Si:Sb and Si:B n+-p step junction diodes grown by LT-MBE at various growth temperatures. The trap density dependence on growth temperature decreases with increasing temperature. However, segregation and diffusion increase with increasing temperature. Electron traps, E1 (0.42–0.45eV) and E2 (0.257eV), and hole traps, H1 (0.38–0.41eV), were found in B-doped layer grown at 370°C, 420°C, 500°C, and 600°C. These traps have been characterized by their capture cross-section, activation energy level, and trap density. The origins of the dominating electron traps are hypothesized as the association with pure divacancy defects. E1 level can be assigned for singly negatively charged divacancy V(0/-) + α and E2 level for doubly negatively charged divacancy V(-2/-).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 745: Symposium N – Novel Materials and Processes for Advanced CMOS , 2002 , N6.9
Copyright
Copyright © Materials Research Society 2003

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