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Growth, Patterning and Microelectronic Applications of Epitaxial Cobaltdisilicide

Published online by Cambridge University Press:  10 February 2011

S. Mantl ,
L. Kappius ,
A. Antons ,
M. Löken ,
F. Klinkhammer ,
M. Dolle ,
Q. T. Zhao ,
S. Mesters ,
C H. Buchal  and
H. L. Bay
...Show all authors
S. Mantl
Affiliation:
Institut fuer Schicht- und Ionentechnik, Forschungszentrum Juelich GmbH, D-52425 Juelich
L. Kappius
Affiliation:
Institut fuer Schicht- und Ionentechnik, Forschungszentrum Juelich GmbH, D-52425 Juelich
A. Antons
Affiliation:
Institut fuer Schicht- und Ionentechnik, Forschungszentrum Juelich GmbH, D-52425 Juelich
M. Löken
Affiliation:
Institut fuer Schicht- und Ionentechnik, Forschungszentrum Juelich GmbH, D-52425 Juelich
F. Klinkhammer
Affiliation:
Institut fuer Schicht- und Ionentechnik, Forschungszentrum Juelich GmbH, D-52425 Juelich
M. Dolle
Affiliation:
Institut fuer Schicht- und Ionentechnik, Forschungszentrum Juelich GmbH, D-52425 Juelich
Q. T. Zhao
Affiliation:
Institut fuer Schicht- und Ionentechnik, Forschungszentrum Juelich GmbH, D-52425 Juelich
S. Mesters
Affiliation:
Institut fuer Schicht- und Ionentechnik, Forschungszentrum Juelich GmbH, D-52425 Juelich
C H. Buchal
Affiliation:
Institut fuer Schicht- und Ionentechnik, Forschungszentrum Juelich GmbH, D-52425 Juelich
H. L. Bay
Affiliation:
Institut fuer Schicht- und Ionentechnik, Forschungszentrum Juelich GmbH, D-52425 Juelich
B. Kabius
Affiliation:
Institut fuer Festkoerperforschung, Forschungszentrum Juelich. GmbH, D-52425 Juelich
H. Trinkaus
Affiliation:
Institut fuer Festkoerperforschung, Forschungszentrum Juelich. GmbH, D-52425 Juelich
K. H. Heinig
Affiliation:
Institut fuer Ionenstrahlphysik und Materialforschung, Forschungszentrum Rossendorf, D-01314 Dresden, Germany
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Abstract

We report on the epitaxial growth of CoSi2 on silicon using ion beam synthesis and molecular beam allotaxy. The latter process uses molecular beam epitaxy to grow a silicide precipitate distribution embedded in single crystalline silicon and thermal annealing to form the epitaxial layer. Both, ion beam synthesis and molecular beam allotaxy, are capable to grow epitaxial buried and surface CoSi2 layers on Si(100) and Si(111) of high quality.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 514: Symposium I – Advanced Interconnects & Contact Materials & Processes for… , 1998 , 145
Copyright
Copyright © Materials Research Society 1998

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References

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