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Growth of PbTe films by magnetron sputtering

Published online by Cambridge University Press:  21 March 2011

A. Jdanov ,
J. Pelleg ,
Z. Dashevsky  and
R. Shneck
A. Jdanov
Affiliation:
Department of Materials Engineering, Ben Gurion University of the Negev, Beer Sheva, 84105, ISRAEL
J. Pelleg
Affiliation:
Department of Materials Engineering, Ben Gurion University of the Negev, Beer Sheva, 84105, ISRAEL
Z. Dashevsky
Affiliation:
Department of Materials Engineering, Ben Gurion University of the Negev, Beer Sheva, 84105, ISRAEL
R. Shneck
Affiliation:
Department of Materials Engineering, Ben Gurion University of the Negev, Beer Sheva, 84105, ISRAEL
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Abstract

Thin films of PbTe were deposited on Si (111) wafers and glass substrates at a constant power for different times and at a constant time at various power levels. In some cases substrate heating to a temperature of ∼673K was performed during sputtering. Structural analysis by Xray diffraction (XRD) and high-resolution electron microscopy (HRTEM) were performed. The composition of the PbTe film was evaluated by Auger depth profile. At an appropriate combination of power and deposition time only (200) and its higher order peaks were observed in the PbTe film. It is expected that it is feasible to obtain epitaxial PbTe film by RF magnetron sputtering.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 691: Symposium G – Thermoelectric Materials 2001--Research and Applications , 2001 , G8.32
Copyright
Copyright © Materials Research Society 2002

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References

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