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Growth of hBN Using Metallic Boron: Isotopically Enriched h10BN and h11BN

Published online by Cambridge University Press:  16 January 2014

T.B. Hoffman ,
Y. Zhang ,
J.H. Edgar  and
D.K. Gaskill
T.B. Hoffman
Affiliation:
Department of Chemical Engineering, Kansas State University, 1005 Durland Hall, Manhattan, KS 66506, U.S.A.
Y. Zhang
Affiliation:
Department of Chemical Engineering, Kansas State University, 1005 Durland Hall, Manhattan, KS 66506, U.S.A.
J.H. Edgar
Affiliation:
Department of Chemical Engineering, Kansas State University, 1005 Durland Hall, Manhattan, KS 66506, U.S.A.
D.K. Gaskill
Affiliation:
Electronics Science and Technology Division, United States Naval Research Laboratory, 4555 Overlook Ave., SW Washington, DC 20375, U.S.A.
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Abstract

Hexagonal boron nitride (hBN) crystals enriched in 10B and 11B isotopes were synthesized using a high temperature (1500° C) Ni-Cr-B reactive-precipitation growth under a N2 atmosphere. Two growth mechanisms were observed: conventional defect-facilitated bulk growth which produced crystals with a platelet-like habit with width and thickness of 20-30 μm and 5 μm, respectively, and vapor-liquid-solid interface growth of hBN whiskers with lengths and diameters as large as 70 μm and 5 μm, respectively. Similar growth mechanisms were seen for samples enriched in either isotope. Isotopic analysis via secondary-ion mass spectrometry showed boron concentrations of 84.4 at% and 93.0 at% for the majority isotopes in the 10B-rich and 11B-rich samples, respectively. Raman spectroscopy showed an increase in peak Raman shift for the 10B-rich sample, having two barely resolved peaks at 1393.5 and 1388.8 cm-1, and a decrease for the 11B-rich sample, having peak at 1359.5 cm-1 (FWHM of 9.4 cm-1), compared to that of natural hBN, with its peak at 1365.8 cm-1 (FWHM of 10.3 cm-1). Raman shift showed a linear trend with increasing 10B concentration allowing for a calibration curve to be developed to estimate 10B enrichment in hBN using non-destructive methods.

Keywords

II-VIcrystal growthsecondary ion mass spectroscopy (SIMS)
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1635: Symposium T – Compound Semiconductor Materials and Devices , 2014 , pp. 35 - 40
Copyright
Copyright © Materials Research Society 2014 

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References

REFERENCES

Lindsay, L. and Broido, D.A., Phys. Rev. B. 84 155421(2011).CrossRefGoogle Scholar
Hoffman, T.B., Clubine, B., Zhang, Y., Snow, K., and Edgar, J.H., in press J. Cryst Growth (2013).Google Scholar
Kubota, Y., Watanabe, K., Tsuda, O., and Taniguchi, T., Chem. Mater. 20, 1661 (2008).CrossRefGoogle Scholar
Hou, K.F., Hu, Z., Fu, J.J., Chen, Y., Liu, B.H., Ding, J., Dong, Z.L., and White, T., Appl. Phys. Lett. 80, 3611 (2002).Google Scholar
Wagner, R.S. and Ellis, W.C., Appl. Phys. Lett. 4, 89 (1964).CrossRefGoogle Scholar
Deepak, F.L., Vinod, C.P., Mukhopadhyay, K., Govinadaraj, A., and Rao, C.N.R., Chem. Phys. Lett. 353, 345 (2002).CrossRefGoogle Scholar
Ishii, T., Sato, T., Sekikawa, Y., and Iwata, M., J. Cryst. Growth. 52, 285 (1981).CrossRefGoogle Scholar
Geick, R., Perry, C. H. and Rupprecht, G., Phys. Rev. 146, 543 (1966).CrossRefGoogle Scholar
Kubota, Y., Watanabe, K., Tsuda, O., and Taniguchi, T., Science. 317, 932 (2007)CrossRefGoogle Scholar