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Growth of GeSi/Si Strained-layer Superlattices Using Limited Reaction Processing

Published online by Cambridge University Press:  28 February 2011

C. M. Gronet ,
C. A. King  and
J. F. Gibbons
C. M. Gronet
Affiliation:
Stanford Electronics Labs, McCullough 226, Stanford, CA 94305
C. A. King
Affiliation:
Stanford Electronics Labs, McCullough 226, Stanford, CA 94305
J. F. Gibbons
Affiliation:
Stanford Electronics Labs, McCullough 226, Stanford, CA 94305
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Abstract

SiGe/Si superlattices were grown using limited reaction processing in a chamber which allows both W-halogen and Hg arc wafer illumination. Each multilayer structure was fabricated in-situ by changing the gas composition between high temperature cycles. Commensurate SiGe alloy layers as thin as 15 nm were reproducibly deposited and were examined using transmission electron microscopy, sputtering Auger electron spectroscopy,and Rutherford backscattering. Preliminary results are presented on UV/ozone cleaning of LRP substrates to remove residual carbon contamination in-situ prior to film deposition.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 71: Symposium F – Materials Issues in Silicon Integrated Circuit Processing , 1986 , 107
Copyright
Copyright © Materials Research Society 1986

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