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Growth of Gallium Nitride Nanowires and Nanospirals

Published online by Cambridge University Press:  01 February 2011

Goutam Koley  and
Zhihua Cai
Goutam Koley
Affiliation:
[email protected], University of South Carolina, Electrical Engineering, 3A12 Swearingen Center, Columbia, SC, 29208, United States, 8037773469
Zhihua Cai
Affiliation:
[email protected], University of South Carolina, Electrcial Engineering, 1B27 Swearingen Center, Columbia, SC, 29208, United States
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Abstract

GaN nanostructure synthesis was done in a quartz tube furnace using ammonia and liquid Ga as precursors, and hydrogen as the carrier gas. Ni nanoparticles formed due to annealing, has been used as the catalyst layer, facilitating vapor-liquid-solid growth of the nanostructures. The growth process resulted in the formation of two types of structures, straight nanowires, and irregular growth sometimes resulting in nanospirals. Growth using uniform distribution of catalyst over the entire surface resulted in growth of straight nanowires, while growth performed on catalyst patterned surface resulted in growth of nanospirals. The diameter of the nanowires varied from 20 – 100 nm, while for spirals the cross-sectional diameters were found to be in the range of 100 nm – 1 micron, and spiral diameters in the range of several microns. Using the present growth system and gas flow set-up, it was possible to synthesize ultra-long nanowires and spirals, with overall lengths exceeding 70 microns. The regular straight nanowires were found to have a smooth circular cross-section, while the irregular wires and nanospirals were found to have a very rough surface with approximate hexagonal or triangular cross-sections. Some of the spirals changed into straight nanowires with uniform triangular cross-sections. While more investigations are required to fully establish their structures, based on preliminary characterization and past studies, we conclude that the nanowires with circular cross-sections grow along the c-direction [0001], while the spirals and consequent triangular cross-section nanowires grow along one of the non-polar directions. The formation of spirals themselves may be related to the polarization properties of GaN, similar to those predicted for ZnO nanosprings and nanoribbons.

Keywords

semiconductingchemical vapor deposition (CVD) (deposition)Ga
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 963: Symposium Q – Nanowires and Carbon Nanotubes – Science and Applications , 2006 , 0963-Q10-17
Copyright
Copyright © Materials Research Society 2007

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References

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