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Growth of Epitaxial γ-Al2O3 Dielectrics on 4H-SiC

Published online by Cambridge University Press:  01 February 2011

Carey M. Tanner ,
Jun Lu ,
Hans-Olof Blom  and
Jane P. Chang
Carey M. Tanner
Affiliation:
[email protected], University of California, Los Angeles, Chemical and Biomolecular Engineering, 420 Westwood Plaza, 1667 Boelter Hall, Los Angeles, CA, 90095, United States, 310-794-4763, 310-206-4107
Jun Lu
Affiliation:
[email protected], Uppsala University, Uppsala, N/A, N/A, Sweden
Hans-Olof Blom
Affiliation:
[email protected], Uppsala University, Uppsala, N/A, N/A, Sweden
Jane P. Chang
Affiliation:
[email protected], University of California, Los Angeles, Chemical and Biomolecular Engineering, Los Angeles, CA, 90095, United States
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Abstract

Highly oriented ?-Al2O3 thin films on 4H-SiC were engineered to demonstrate their potential as a crystalline high-k gate dielectric in SiC power MOSFETs. As-deposited Al2O3 thin films grown on 4H-SiC (0001) by thermal atomic layer deposition (ALD) were amorphous as determined by in-situ reflection high-energy electron diffraction (RHEED). Upon annealing in N2 at 1100°C, the film crystallized to the ?-Al2O3 phase as observed by RHEED, high-resolution transmission electron microscopy (HRTEM) and X-ray diffraction (XRD). Based on Fourier transforms of the HRTEM image, an epitaxial relationship of ?-Al2O3 (111) on 4H-SiC (0001) was observed in which ?-Al2O3 (-110) is oriented with 4H-SiC (-12-10). This orientation was further confirmed by XRD analysis in which only the ?-Al2O3 (111) and (222) peaks were observed. An abrupt interface of both amorphous and crystalline Al2O3 with 4H-SiC was determined by HRTEM.

Keywords

dielectricepitaxyatomic layer deposition
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 911: Symposium B – Silicon Carbide 2006 – Materials, Processing and Devices , 2006 , 0911-B10-06
Copyright
Copyright © Materials Research Society 2006

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References

1 Saddow, S.E. and Agarwal, A., Advances in Silicon Carbide Processing and Applications. (Artech House, Norwood, 2004).Google Scholar
2 Afanas'ev, V.V., Ciobanu, F., Dimitrijev, S. et al., “Band alignment and defect states at SiC/oxide interfaces” J Phys: Condens Matter 16, S1839–S1856 (2004).Google Scholar
3 Zborowski, J.T., Golding, T.D., Forrest, R.L. et al., “Epitaxial growth of Al2O3/Si heterostructures” J. Vac. Sci. Technol. B 16 (3), 1451–1455 (1998).Google Scholar
4 Afanas'ev, V.V., Stesmans, A., Mrstik, B.J. et al., “Impact of annealing-induced compaction on electronic properties of atomic-layer-deposited Al2O3 ” Appl. Phys. Lett. 81 (9), 1678–1680 (2002).Google Scholar
5 Hong, M., Kortan, A.R., Kwo, J. et al., “Epitaxial growth and structure of thin single crystal gamma-Al2O3 films on Si (111) using e-beam evaporation of sapphire in ultra-high vacuum” Mat. Res. Soc. Symp. Proc. 811, 275–280 (2004).Google Scholar
6 Lipkin, L.A. and Palmour, John W., “Insulator Investigation on SiC for Improved Reliability” IEEE Trans. Electron Devices 46 (3), 525–532 (1999).Google Scholar
7 Gao, K.Y., Seyller, Th., Ley, L. et al., “Al2O3 prepared by atomic layer deposition as gate dielectric on 6H-SiC(0001)“ Appl. Phys. Lett. 83 (9), 1830–1832 (2003).Google Scholar