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Growth of Co-evaporated Cu(In,Ga)Se2 – The Influence of Rate Profiles on Film Morphology

Published online by Cambridge University Press:  21 March 2011

M. Bodegård ,
J. Kessler ,
O. Lundberg ,
J. Schöldström  and
L. Stolt
M. Bodegård
Affiliation:
Ångström Solar Center, Uppsala UniversityP.O. Box 534 751 21 Uppsala, Sweden
J. Kessler
Affiliation:
Ångström Solar Center, Uppsala UniversityP.O. Box 534 751 21 Uppsala, Sweden
O. Lundberg
Affiliation:
Ångström Solar Center, Uppsala UniversityP.O. Box 534 751 21 Uppsala, Sweden
J. Schöldström
Affiliation:
Ångström Solar Center, Uppsala UniversityP.O. Box 534 751 21 Uppsala, Sweden
L. Stolt
Affiliation:
Ångström Solar Center, Uppsala UniversityP.O. Box 534 751 21 Uppsala, Sweden
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Abstract

The influence of the evaporation rate profiles on the microstructure of co-evaporated Cu(In,Ga)Se2, (CIGS), is discussed. The influence of Cu excess in the beginning of the CIGS growth has been investigated. In addition, the Ga rate has been varied in order to create bandgap grading in the CIGS film. By studying CIS and CGS films separately and as CGS/CIS stacks results on interdiffusion of In and Ga interdiffusion have been obtained. The resulting thin films are investigated mainly using Scanning Electron Microscopy (SEM) and X-ray Diffraction (XRD). Solar cell devices were prepared and IV measurements performed on samples with varying CIGS deposition parameters.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 668: Symposium H – II-IV Compound Semiconductor Photovoltaic Materials , 2001 , H2.2
Copyright
Copyright © Materials Research Society 2001

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References

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