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Growth of BN Thin Films by Pulsed Laser Deposition

Published online by Cambridge University Press:  28 February 2011

J. A. Knapp
J. A. Knapp*
Affiliation:
Sandia National Laboratories, Div. 1111, P.O. Box 5800, Albuquerque, NM 87185
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Abstract

A new UHV system for pulsed laser deposition of materials is described, together with results from preliminary experiments for depositions of BN on Si. The system is designed to allow for in-situ diagnostics of the ablation plasma, as well as UHV preparation and characterization of clean sample substrates. The room temperature depositions of BN result in amorphous, B-rich films, whose particle content is a strong function of laser wavelength.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 235: Symposium A – Phase Formation and Modification by Beam-Solid Interactions , 1991 , 885
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

[1] Laser Ablation for Materials Synthesis, edited by Paine, David C. and Bravman, John C. (Mater. Res. Soc. Proc. 191, Pittsburgh, PA 1990).Google Scholar
[2] Kessler, G., Bauer, H.-D., Pompe, W., and Scheibe, H.-J., Thin Solid Films, 147, L45 (1987).Google Scholar
[3] Murray, P.T., Donley, M.S., and McDevitt, N.T., in Processing and Characterization of Materials Using Ion Beams, edited by Rehn, L.E., Greene, J.E., and Smidt, F.A. (Mater. Res. Soc. Proc. 128, Pittsburgh, PA 1989) pp. 469–474.Google Scholar
[4] Doll, G.L., Sell, J.A., Taylor, C.A. II, and Clarke, R., Phys. Rev. 43, 6816 (1991).Google Scholar
[5] Doll, G.L., Sell, J.A., Salamanca-Riba, L., and Ballal, A.K., in ref. 1.Google Scholar
[6] Doll, G.L., Perry, T.A., Sell, J.A., Taylor, C.A., and Clarke, R., in Wide Band-Gap Semiconductors, edited by Moustakas, T.D., Pankove, J.I., and Hamakawa, Y. (Mater. Res. Soc. Proc. 242, Pittsburgh, PA 1992) in press.Google Scholar
[7] Fnedmann, T.A., McCarty, K.F., Klaus, E.J., Boehme, D., Clift, W.M., Johnsen, H.A., Mills, M.J., Ottesen, D.K., and Stulen, R.H., in Wide Band-Gap Semiconductors, edited by Moustakas, T.D., Pankove, J.I., and Hamakawa, Y. (Mater. Res. Soc. Proc. 242. Pittsburgh, PA 1992) in press.Google Scholar