Hostname: page-component-586b7cd67f-g8jcs Total loading time: 0 Render date: 2024-11-28T07:35:49.543Z Has data issue: false hasContentIssue false

Growth of Bi2Se3 Films by Chemical Bath Deposition at Room Temperature

Published online by Cambridge University Press:  14 January 2014

Sovannary Phok
Affiliation:
National Energy and Water Research Center, Abu Dhabi Water and Electricity Authority, Po. Box 54111, Abu Dhabi, United Arab Emirates.
Fatima Subait Al Wahshi
Affiliation:
National Energy and Water Research Center, Abu Dhabi Water and Electricity Authority, Po. Box 54111, Abu Dhabi, United Arab Emirates.
Shifaa Mohsen Al Baity
Affiliation:
National Energy and Water Research Center, Abu Dhabi Water and Electricity Authority, Po. Box 54111, Abu Dhabi, United Arab Emirates.
Saeed Ali Abdulla Yalyali
Affiliation:
National Energy and Water Research Center, Abu Dhabi Water and Electricity Authority, Po. Box 54111, Abu Dhabi, United Arab Emirates.
Get access

Abstract

Bismuth selenide (BixSey) films are deposited onto glass substrate using chemical bath deposition at room temperature. The reacting bath contained bismuth nitrate, triethanolamine and sodium selenosulfate as selenium (Se) source. Ammonium hydroxide is used to adjust the pH of the bath. The films deposited in solutions containing Se source solution of 10 ml and 15 ml are characterized by surface morphological, compositional and structural, properties. The optimum deposition time is about 3 hours for both solutions. Films deposited up to 24 hours in bath with 10 ml Se source solution had thickness ranging up to 232 nm. The deposition rate is found to increase up to 61 nm/h for 3-hour deposition. In the case of bath with 15 ml Se source solution, the film thickness ranged from 45 nm to 632 nm for 1-hour to 24-hour deposition, respectively; with a deposition rate increasing up to 123 nm/h for 3-hour deposition. Film roughness of about 6.6 nm to 22.8 nm is measured by atomic force microscope for films deposited in bath containing 10 mL Se source and 15 ml of Se source, respectively. Crack free layers are observed with randomly large plate-like particles on top of the layer for some films. The films with typical composition of Bi21.8Se78.2 are found to be rich in Se when deposited for 6 hours, whereas the composition of a film deposited in the same bath (10 mL Se source) for 3 hours is found at Bi60.3Se39.6. Additionally, structural analysis performed by x-ray diffraction (XRD) did not reveal well-defined XRD patterns, which indicates that BixSey films were constituted mostly of nanocrystalline grains.

Type
Articles
Copyright
Copyright © Materials Research Society 2014 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Zaanen, J., Science 323, 888 (2009).10.1126/science.1169344CrossRefGoogle Scholar
Zhang, H., Liu, C.-H., Qi, X.-L., Dai, X., Fang, Z. and Zhang, S.-C., Nat. Phys. 5, 438 (2009).10.1038/nphys1270CrossRefGoogle Scholar
Hor, Y. S. et al. ., Phys. Rev. Let. 104, 057001 (2010).10.1103/PhysRevLett.104.057001CrossRefGoogle Scholar
Bhattacharya, R.N., Pramanik, P.J., Electrochem. Soc. 129, 332 (1982).10.1149/1.2123828CrossRefGoogle Scholar
Lostak, P., Drasar, C., Sussmann, H., Reinshaus, P., Benes, L., J. Cryst. Growth 179, 144 (1997).Google Scholar
Augustine, S. et al. ., J. Phys.: Condens. Matter 19, 2873 (2005).Google Scholar
Deshpande, M.P., Pandya, N.N., Parmar, M.N., Turk. J. Phys. 33, 139 (2009).Google Scholar
Navrátil, J. et al. ., Solid State Chem. 177, 1704 (2004).10.1016/j.jssc.2003.12.031CrossRefGoogle Scholar
Gorer, S., Albu-Yaron, A., Hodes, G., Chem. Mater. 7, 1243 (1995).10.1021/cm00054a027CrossRefGoogle Scholar