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Growth of an InGaAs/Alingaas Mqw Non-Linear Etalon with Integrated 1.5μm GaInAsP/InP Epitaxial BRAGG Reflector

Published online by Cambridge University Press:  21 February 2011

A.J. Dann ,
M.A. Salter ,
M.A. Fisher ,
I. Reid ,
D.T. Neilson ,
J.E. Ehrlich  and
A.C. Walker
A.J. Dann
Affiliation:
BT Laboratories, Martlesham Heath, Ipswich, IP5 7RE, United Kingdom.
M.A. Salter
Affiliation:
BT Laboratories, Martlesham Heath, Ipswich, IP5 7RE, United Kingdom.
M.A. Fisher
Affiliation:
BT Laboratories, Martlesham Heath, Ipswich, IP5 7RE, United Kingdom.
I. Reid
Affiliation:
BT Laboratories, Martlesham Heath, Ipswich, IP5 7RE, United Kingdom.
D.T. Neilson
Affiliation:
Department of Physics, Heriot-Watt University, Riccarton, Edinburgh, EH14 4AS, United Kingdom.
J.E. Ehrlich
Affiliation:
Department of Physics, Heriot-Watt University, Riccarton, Edinburgh, EH14 4AS, United Kingdom.
A.C. Walker
Affiliation:
Department of Physics, Heriot-Watt University, Riccarton, Edinburgh, EH14 4AS, United Kingdom.
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Abstract

The Gas Source MBE growth of high quality GaInAsP/InP Bragg reflector stacks for operation at 1.5μm followed by growth of an MOVPE AlInGaAs/InGaAs MQW structure is demonstrated. An asymmetric Fabry-Perot non-linear etalon structure was completed by dielectric mirror deposition. A clear bistable response was observed for the device as a function of incident light intensity, with low critical switching power (<lmW) and excellent thermal stability.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 326: Symposium M – Growth, Processing, and Characterization of Semiconductor Heterostructures , 1993 , 163
Copyright
Copyright © Materials Research Society 1994

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References

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