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Growth, Microstructural and Ferroelectric Properties of PZT Films Prepared by Pulsed Laser Deposition Method

Published online by Cambridge University Press:  10 February 2011

Ashok Kumar ,
M.R. Alam  and
M. Shamsuzzoha
Ashok Kumar
Affiliation:
Advanced Thin Film Laboratory, Department of Electrical and Computer Engineering, EEB 60, University of South Alabama, Mobile, AL 36688
M.R. Alam
Affiliation:
Advanced Thin Film Laboratory, Department of Electrical and Computer Engineering, EEB 60, University of South Alabama, Mobile, AL 36688
M. Shamsuzzoha
Affiliation:
Department of Metallurgical and Materials Engineering, University of Alabama, Tuscaloosa, AL 35487
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Abstract

Pb(ZrxTi1−xO3 (lead zirconate titanate or PZT) ferroelectric thin film capacitors are of considerable interest for the realization of memory devices such as nonvolatile random access memories (NVRAMs). The PZT capacitors were prepared on platinized silicon Pt/(100)Si using conducting oxide LaxSrl.xCOO (lanthanum strontium cobalt oxide or LSCO) as electrodes. The PZT and LSCO thin films were deposited by the KrF excimer laser ablation technique. The optimum preparation conditions such as oxygen pressure, laser energy influence and substrate temperature were investigated. The PZT and LSCO films grown on Pt/(100)Si are polycrystalline. The crystallographic properties of the films were determined using X-ray diffractometer (XRD) method. The cross-sectional transmission electron microscope showed very smooth interface among different layers of films. The electrical characterizations of the films including hysteresis loop, fatigue, and retention properties were determined by the RT66A Standardized Ferroelectric Test System.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 541: Symposium O – Ferroelectric Thin Films VII , 1998 , 319
Copyright
Copyright © Materials Research Society 1999

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References

REFERENCES

1. Kingon, A. I., Streiffer, S. K., Basceri, C. and Summerfelt, S. R., Mater. Res. Bull., 71, 46 (1996)Google Scholar
2. Kojima, M., Sunagawa, M., Seto, H., Matsui, Y. and Hamakawa, Y., Jpn. J. Appl. Phys., 22, 255 (1982)Google Scholar
3. Okuyama, M. and Hamakawa, Y., Ferroelectrics, 6, 24 (1985)Google Scholar
4. Araujo, C. A., Millan, L. D. Mc, Melnick, B. M., Cuchiaro, J. D. and Scott, J. F., Ferrolectrics, 104, 241 (1990)Google Scholar
5. Ibuki, S., Nakagawa, T., Okuyama, M., and Hamakawa, Y., Jpn. J Appl. Phys. 29, 532 (1990).Google Scholar
6. Sanches, L.E., Wu, S.Y., and Naik, I.K., Appl. Phys. Lett. 56, 2399 (1990).Google Scholar
7. Okada, M., Tominaga, K., Araki, T., Katayama, S., and Sakashita, Y., Jpn. J. Appl. Phys. 29, 718 (1990).Google Scholar
8. Shu, N., MS Thesis, Dept. of Electrical Engineeing., USA, 1996.Google Scholar
9. Kumar, Ashok, Alam, M. R., Mangiaracina, A. and Shamsuzzoha, M., Journal of Electronic Materials, Vol. 26, No.11, 11–14 (1997)Google Scholar
10. Kidoh, H., Ogawa, T., Morimoto, A. and Shimizu, T., Appl. Phy. Lett. 58, 25 (1991).Google Scholar
11. Auciello, O., Mantese, L., Duarte, J., Chen, X., Rou, S.H., Kingon, A.I., Schreiner, A.F. and Krauss, A.R., J. Appl. Phys. 73, 10 (1993).Google Scholar
12. Lee, J., Safari, A. and Pfeffer, R.L., Appl. Phys. Lett. 61, 14 (1992).Google Scholar
13. Ramesh, R., Sands, T., and Keramidas, V.G., Appl. Phys. Lett. 6, 10 (1993).Google Scholar