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Growth And Characterization of Thin Wet Oxides Grown by Rapid Thermal Processing

Published online by Cambridge University Press:  10 February 2011

R. Sharangpani ,
J. Das ,
S. P. Tay ,
R. P. S. Thakur ,
T. C. Yang  and
K. C. Saraswat
R. Sharangpani
Affiliation:
AG Associates, 4425 Fortran Drive, San Jose, CA 95134
J. Das
Affiliation:
AG Associates, 4425 Fortran Drive, San Jose, CA 95134
S. P. Tay
Affiliation:
AG Associates, 4425 Fortran Drive, San Jose, CA 95134
R. P. S. Thakur
Affiliation:
AG Associates, 4425 Fortran Drive, San Jose, CA 95134
T. C. Yang
Affiliation:
Department of Electrical Engineering, Stanford University, Stanford, CA 94305
K. C. Saraswat
Affiliation:
Department of Electrical Engineering, Stanford University, Stanford, CA 94305
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Abstract

The growth of high quality thin (<10 nm) oxides is one of the most critical steps in the fabrication of the entire spectrum of silicon based devices. Rapid thermal wet oxidation is emerging as a promising technique for this application due to features such as higher throughput, superior oxide quality, faster response and precise thickness control. In this paper, an integrated pyrogenic steam generator -RTP system is described. Theoretical and experimental growth curves along with thickness contour maps and preliminary reliability results are presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 525: Symposium W – Rapid Thermal & Integrated Processing VII , 1998 , 143
Copyright
Copyright © Materials Research Society 1998

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References

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