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Growth and Characterization of Hydrogenated Amorphous Silicon using Liquid Organic Sources

Published online by Cambridge University Press:  21 February 2011

K. Gaughan ,
S. Hershgold ,
J. M. Viner  and
P. C. Taylor
K. Gaughan
Affiliation:
Department of Physics, University of Utah, Salt Lake City, Utah 84112
S. Hershgold
Affiliation:
Department of Physics, University of Utah, Salt Lake City, Utah 84112
J. M. Viner
Affiliation:
Department of Physics, University of Utah, Salt Lake City, Utah 84112
P. C. Taylor
Affiliation:
Department of Physics, University of Utah, Salt Lake City, Utah 84112
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Abstract

The uses of liquid sources such as tertiarybutylphosphine (TBP) for n-type doping in hydrogenated amorphous silicon (a-Si:H) and ditertiarybutylsilane (DTBS) and n-butylsilane (NBS) for hydrogenated amorphous silicon-carbon alloys (a-SiC:H) are described. A rf glow discharge process is employed to produce the doped a-Si:H and a-SiC:H thin films. Tertiarybutylphosphine (TBP) may ultimately be preferred over phosphine because TBP is less toxic, less pyrophoric and safer to implement. The gross doping properties of a-Si:H doped with TBP are the same as those obtained with phosphine, but there are some differences. N-butylsilane (NBS) and DTBS have been used to produce wide band gap (E04 3 ≈ eV) a-SiC:H.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 219: Symposium A – Amorphous Silicon Technology - 1991 , 1991 , 697
Copyright
Copyright © Materials Research Society 1991

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References

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