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GROWTH AND CHARACTERIZATION OF Hg1−xCdxTe ON CdTe SUBSTRATES, PREPARED BY ORGANOMETALLIC EPITAXY

Published online by Cambridge University Press:  28 February 2011

I. B. Bhat  and
S. K. Ghandhi
I. B. Bhat
Affiliation:
Electrical, Computer, and Systems Engineering Department, Rensselaer Polytechnic Institute, Troy, New York 12180-3590
S. K. Ghandhi
Affiliation:
Electrical, Computer, and Systems Engineering Department, Rensselaer Polytechnic Institute, Troy, New York 12180-3590
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Abstract

Hgl−xCdxTe layers have been grown on CdTe substrates using dimethylcadmium, diethyltelluride and mercury in a horizontal reactor. Details of conditions for growth of these layers are presented in this paper. Specular surfaces of Hg1−x CdxTe with × ≥ 0.15 were obtained on (100) 3°, → (110) oriented CdTe substrates. Both n-type and p-type layers could be obtained. The mobility of these layers was measured over the temperature range of 10 K to 300 K. The mobility of n-type Hg.81 Cd.19Te layers, measured at 2.1 kG, was 3.0 × 105 cm2/V-sec at 60 K, falling to 2 × 105 cm2/V-sec at 10 K. P-type layers were also grown, and are described in this paper.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 56: Symposium H – Layered Structures and Epitaxy , 1985 , 103
Copyright
Copyright © Materials Research Society 1986

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