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Grain Orientation Mapping of Passivated Aluminum Interconnect Lines with X-ray Micro-Diffraction

Published online by Cambridge University Press:  10 February 2011

A. A. MacDowell ,
C. H. Chang ,
H. A. Padmore ,
J. R. Patel  and
A. C. Thompson
A. A. MacDowell
Affiliation:
Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, CA 94720
C. H. Chang
Affiliation:
Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, CA 94720 SSRL/SLAC, Stanford University, Stanford, CA 94309
H. A. Padmore
Affiliation:
Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, CA 94720
J. R. Patel
Affiliation:
Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, CA 94720 SSRL/SLAC, Stanford University, Stanford, CA 94309
A. C. Thompson
Affiliation:
Center for X-Ray Optics, Lawrence Berkeley National Laboratory, Berkeley, CA 94720
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Abstract

A micro x-ray diffraction facility is under development at the Advanced Light Source. Spot sizes are typically about 1-μm size generated by means of grazing incidence Kirkpatrick-Baez focusing mirrors. Photon energy is either white of energy range 6-14 keV or monochromatic generated from a pair of channel cut crystals. A Laue diffraction pattern from a single grain in a passivated 2-μm wide bamboo structured Aluminum interconnect line has been recorded. Acquisition times are of the order of a few seconds. The Laue pattern has allowed the determination of the crystallographic orientation of individual grains along the line length. The experimental and analysis procedures used are described, as is a grain orientation result. The future direction of this program is discussed in the context of strain measurements in the area of electromigration.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 524: Symposium V – Application of Synchrotron Radiation Techniques…IV , 1998 , 55
Copyright
Copyright © Materials Research Society 1998

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References

REFERENCES

1. Marieb, T., Flinn, P., Bravman, J. C., Gardner, D., and et al. J. App Phys. 78, 1026–1032 (1995).Google Scholar
2. Wang, P. C., Cargill, G. S., Noyan, I. C., Liniger, E. G., Hu, C. K. and Lee, K. Y., MRS Proceedings 473, 273–278 (1997).Google Scholar
3. Chung, J. S., Ice, G. E., These proceedings.Google Scholar
4. Rindby, A., Engstrom, P. and Janssens, K., J.Synchrotron Rad. 4, 228–235 (1997)Google Scholar
5. MacDowell, A. A., Celestre, R., Chang, C. H., Franck, K., Howells, M. R., Locklin, S., Padmore, H. A., Patel, J. R., and Sandler, R., SPIE Proceedings 3152, 126–135 (1998).Google Scholar
6. Soyer, A., J. App. Cryst. 29, 509 (1996); http://www.lmcp.jussieu.fr/sincris/logiciel/laueX/en/laueXen.html.Google Scholar