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Gmr Effect and Properties of CoAg Granular Films Formed by Implantation with a Metal Vapor Vacuum Arc Ion Source

Published online by Cambridge University Press:  21 February 2011

S.P. Wong
Affiliation:
The Chinese Univ. of Hong Kong, Dept of Electronic Engineering, Shatin, N.T., HongKong, China
M.F. Chiah
Affiliation:
The Chinese Univ. of Hong Kong, Dept of Electronic Engineering, Shatin, N.T., HongKong, China
W.Y. Cheung
Affiliation:
The Chinese Univ. of Hong Kong, Dept of Electronic Engineering, Shatin, N.T., HongKong, China
N. Ke
Affiliation:
The Chinese Univ. of Hong Kong, Dept of Electronic Engineering, Shatin, N.T., HongKong, China
J.B. Xu
Affiliation:
The Chinese Univ. of Hong Kong, Dept of Electronic Engineering, Shatin, N.T., HongKong, China
X.X. Zhang
Affiliation:
Hong Kong Univ. of Science and Technology, Physics Dept, Kowloon, Hong Kong, China
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Abstract

Cobalt-silver granular thin films were formed by Co implantation into Ag using a metal vapor vacuum arc (MEVVA) ion source. The magnetic field dependence and the temperature variation of the giant magnetoresistance (GMR) effect and their relation with the processing conditions were studied and discussed in conjunction with results of Rutherford backscattering spectrometry, atomic force microscopy, magnetic force microscopy (MFM), and SQUID measurements. Anomalous temperature dependence of the coercive field Hc in the perpendicular-to-film direction determined from GMR measurements was observed for some samples. For one sample, Hc shows a maximum value at around 240K and decreases with decreasing temperature from 240K to 20K. The temperature variation of the magnetization M of this sample exhibits a minimum. The maximum in the Hc-T curve corresponds well with the minimum in the M-T curve. The M-T curve suggests that there is more than one magnetic phase present in this sample. The domain structures of the implanted granular films as revealed by MFM images exhibit very different features compared with those of sputter deposited CoAg granular films.

Type
Research Article
Copyright
Copyright © Materials Research Society 1999

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References

REFERENCES

[1] Baibich, M.N., Broto, J.M., Fert, A., Dau, F. Nguyen Van, Patroff, F., Etienne, P., Creuzet, G., Friederich, A., Chazelas, J., Phys. Rev. Lett. 61, 2472 (1988).Google Scholar
[2] Xiao, J.Q., Jiang, J.S., Chien, C.L., Phys. Rev. Lett. 68, 3749 (1992).Google Scholar
[3] Berkowitz, A.E., Mitchell, J.R., Carey, M.J., Young, A.P., Zhang, S., Spada, F.E., Parker, F.T., Hutten, A., Thomas, G., Phys. Rev. Lett. 68, 3745 (1992).Google Scholar
[4] Tsoukatos, A., Wan, H., Hadjipanayis, G.C., Unruh, K.M., Li, Z.G., J. Appl. Phys. 73, 5509 (1993).Google Scholar
[5] Gavrin, A., Kelley, M.H., Xiao, J.Q., Chien, C.L., Appl. Phys. Lett. 66, 1683 (1995).Google Scholar
[6] Sang, H., Ni, G., Zhang, S., Du, Y., Wong, S.P., Ke, N., Cheung, W.Y., IEICE Trans. Electron E80–C, 1161 (1997).Google Scholar
[7] Wong, S.P. and Cheung, W.Y., Mat. Res. Soc. Symp. Proc. 475, 55 (1997).Google Scholar
[8] Chen, Y.J., Cheung, W.Y., Wilson, I.H., Ke, N., Wong, S.P., Xu, J.B., Sang, H., Ni, G., Appl. Phys. Lett. 72, 2472 (1998).Google Scholar
[9] Soares, J.C., Redondo, L.M., Jesus, C.M. de, Marques, J.G., Silva, M.F. da, Azevedo, M.M. Pereira de, Mendes, J.A., Rogalski, M.S., Sousa, J.B., J. Vac. Sci. Technol. A16, 1812 (1998).Google Scholar
[10] Butera, A., Klemmer, T.J., Barnard, J.A., J. Appl. Phys. 83, 4885 (1998).Google Scholar
[11] Wong, S.P., Chiah, M.F., Cheung, W.Y., Ke, N., Xu, J.B., Nucl. Instr. and Meth. B148, 813 (1999).Google Scholar
[12] Brown, I.G., Gavin, J.E., MacGill, R.A., Appl. Phys. Lett. 47, 358 (1985).Google Scholar
[13] Brown, I.B. and Godechot, X., IEEE Trans. Plasma Sci. 19, 716 (1991).Google Scholar