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Germanium Island Size Distribution by Atomistic Simulation

Published online by Cambridge University Press:  01 February 2011

Richard J. Wagner  and
Erdogan Gulari
Richard J. Wagner
Affiliation:
Department of Chemical Engineering, University of Michigan Ann Arbor, MI 48103, U.S.A.
Erdogan Gulari
Affiliation:
Department of Chemical Engineering, University of Michigan Ann Arbor, MI 48103, U.S.A.
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Abstract

Strained epitaxial growth of Ge on Si(001) produces self-assembled, nanometer scale islands, or quantum dots. We study this growth by atomistic simulation, computing the energy of island structures to determine when and how islanding occurs. The distribution of island sizes on a surface is determined by the relation of island energy to size. Applying the calculated chemical potential to the Boltzmann-Gibbs distribution, we predict size distributions as functions of coverage and temperature. The peak populations around 80 000 atoms (35 nm wide) compare favorably with experiment.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 794: Symposium T – Self-Organized Processes in Semiconductor Heteroepitaxy , 2003 , T1.6
Copyright
Copyright © Materials Research Society 2004

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References

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