Hostname: page-component-586b7cd67f-tf8b9 Total loading time: 0 Render date: 2024-11-24T20:49:41.087Z Has data issue: false hasContentIssue false
  • English
  • Français

Gas Sensor Using an Aluminium-Porous Silicon Junction Application to the Detection of Non-Zero Molecular Dipole Moment

Published online by Cambridge University Press:  28 February 2011

D. Stievenard  and
D. Deresmes
D. Stievenard
Affiliation:
Institut d'Electronique et de Microélectronique du Nord, IEMN, UMR 9929 (CNRS), Département ISEN, 41 Bd Vauban, 59046 LILLE Cédex, France
D. Deresmes
Affiliation:
Institut d'Electronique et de Microélectronique du Nord, IEMN, UMR 9929 (CNRS), Département ISEN, 41 Bd Vauban, 59046 LILLE Cédex, France
Get access

Abstract

Porous silicon is known to be sensitive to moisture. Using an aluminium-porous p+ silicon junction, we have realized a sensor which dc current increases up to two orders of magnitude in the presence of ammoniac. We have tested a series of various gases and we show that if the dipole moment of the molecule is zero, there is no effect on the dc current. To interpret quantitatively this phenomenon, we assume that the conductivity is governed by the width of a channel resulting from the partial depletion of silicon located between two pores. This depleted region is due to the charges trapped on surface states associated with the Si-SiO2 interface where SiO2 is the native silicon oxide. When some gas is adsorbed, we propose there is a passivation of the interface states (mainly dangling bonds), leading to a decrease of the depleted region, i.e. an increase of the width of the channel and thus an increase of the current. The adsorbed gas gives a dipole layer at the surface of the pore. This layer has no influence on the depleted region. It stabilizes electrons or holes at the porous Si surface, allowing a stable charge state of the dangling bonds.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 358: Symposium F – Microcrystalline and Nanocrystalline Semiconductors , 1994 , 599
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Canham, L.T., Appl.Phys.Lett.57, 1046, (1990)Google Scholar
2 Anderson, R.C., Muller, R.S. and Tobias, C.W., J.Electrochem.Soc. 138 (11), 3406 (1991)Google Scholar
3 Mares, J.J., Kristofik, J., Pangrac, J. and Hospodkova, A., Appl.Phys.Lett.63(2), 180 (1993)Google Scholar
4 Pulsford, N.J., Rikken, G.L.J.A., Kessener, Y.A.R.R., Lous, E.J. and Venhuizen, A.H.J., J. Appl.Phys.75(l), 636 (1994)Google Scholar
5 Koyama, H. and Koshida, N., Journal of Luminescence 57, 293 (1993)Google Scholar
6 Ben Chorin, M., A and F.Koch, Journal of Luminescence 57, 159 (1993)Google Scholar
7 Cadet, C., Deresmes, D., Vuillaume, D. and Stiévenard, D., Appl.Phys.Lett.64(21), 2827 (1994)Google Scholar
8 Deresmes, D., Marissael, V., Stiévenard, D. and Ortega, C., Thin Solid Films, in pressGoogle Scholar
9 Anderson, R.C., Muller, R.S. and Tobias, C.W., Sensors and Actuators, A21–A23, 835 (1990)Google Scholar
10 Atanassova, E. and Dimitrova, T., Solis State Electr., Vol.36(12), 1711 (1993)Google Scholar
11 Ben-Chorin, M. and Kux, A., Appl.Phys.Lett.64(4), 481 (1994)Google Scholar
12 von Bardeleben, H.J., Stiévenard, D., Grosman, A., Ortega, C. and Siejka, J., Phy.Rev.B47, 10899 (1993)Google Scholar
13 Ortega, C., Siejka, J. and Vizkelethy, G., Nuclear Instruments and Methods in Physics Research B45, 622 (1990)Google Scholar
14 Lauerhass, J.M. and Sailor, M.J., Science Vol.261, 1567 (1993)Google Scholar
15 Thorp, H.H., Kumar, C.V., Turro, N.J. and Gray, H.B., J. Am.Chem.Soc.111, 4364 (1989)Google Scholar