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Gamma Ray Detection with Cd0.9Zn0.1Te Based Detectors Grown Using a Te Solvent Method

Published online by Cambridge University Press:  15 November 2013

Sandeep K. Chaudhuri ,
Kelvin J. Zavalla ,
Ramesh M. Krishna  and
Krishna C. Mandal
Sandeep K. Chaudhuri
Affiliation:
Department of Electrical Engineering, 301 Main Street, University of South Carolina, Columbia, SC 29208, U.S.A.
Kelvin J. Zavalla
Affiliation:
Department of Electrical Engineering, 301 Main Street, University of South Carolina, Columbia, SC 29208, U.S.A.
Ramesh M. Krishna
Affiliation:
Department of Electrical Engineering, 301 Main Street, University of South Carolina, Columbia, SC 29208, U.S.A.
Krishna C. Mandal*
Affiliation:
Department of Electrical Engineering, 301 Main Street, University of South Carolina, Columbia, SC 29208, U.S.A.
*
*Email: [email protected]
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Abstract

Cd0.9Zn0.1Te (CZT) single crystal has been grown using a tellurium solvent method. Two CZT crystals have been chosen from two different locations of the grown ingot. The two crystals were characterized using infrared transmission (IR) imaging and radiation detectors in planar geometry were fabricated on them. Current-voltage characteristics (I-V) revealed a resistivity of ∼8.6×1010 Ω−cm for detector A (6.9×6.9×4.8 mm3) and 6.7×1010 Ω−cm for detector B (11.5×11.7×2.6 mm3). IR imaging showed a lesser concentration of Te inclusions/precipitates in detector A. The transport properties viz., electron drift-mobility and electron mobility-lifetime product were measured using alpha spectroscopy in these detectors in a planar configuration. Detector A showed better charge transport properties compared to detector B. The superior transport properties of crystal A were reflected in the spectroscopic properties of the detectors. Gamma pulse height measurements using a 241Am isotope revealed an energy resolution of ∼5 % for detector A and ∼7 % for detector B. A digital spectrometer and a biparametric correction scheme was incorporated to recover the pulse height spectrum of high energy gamma rays (137Cs source) from the effect of poor hole movement.

Keywords

devicessemiconductingcrystal growth
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1576: Symposium WW – Nuclear Radiation Detection Materials , 2013 , mrss13-1576-ww04-03
Copyright
Copyright © Materials Research Society 2013 

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References

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