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Formation of Si/SiC heterostructures for silicon-based quantum devices using single CH3SiH3-gas source free jet

Published online by Cambridge University Press:  15 March 2011

Ryota Ohtani ,
Yoshifumi Ikoma  and
Teruaki Motooka
Ryota Ohtani
Affiliation:
Department of Materials Science and Engineering, Kyushu University, 6-10-1 Hakozaki, Fukuoka 812-8581, JAPAN
Yoshifumi Ikoma
Affiliation:
Department of Materials Science and Engineering, Kyushu University, 6-10-1 Hakozaki, Fukuoka 812-8581, JAPAN
Teruaki Motooka
Affiliation:
Department of Materials Science and Engineering, Kyushu University, 6-10-1 Hakozaki, Fukuoka 812-8581, JAPAN
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Abstract

We have investigated the formation and current-voltage characteristics of Si-dots/SiC multilayer heterostructures on p+Si(100) substrates by means of supersonic free-jet chemical vapor deposition using a single gas source CH3SiH3. Si-dots were successfully deposited on epitaxial SiC thin films on Si(100) with assistance of a tungsten hot filament. Negative deferential resistance was observed in the current-voltage curve of SiC/Si-dot/SiC measured by an atomic force microscope using a gold-coated conductive cantilever. The observed current-voltage characteristics can be attributed to the hole resonant tunneling through the SiC double barriers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 815 , 2004 , J5.11
Copyright
Copyright © Materials Research Society 2004

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