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Formation of quantum dots by self-rearrangement of metastable 2D GaN

Published online by Cambridge University Press:  11 February 2011

N. Gogneau ,
D. Jalabert ,
E. Monroy ,
C. Adelmann  and
B. Daudin.
N. Gogneau
Affiliation:
CEA / CNRS / UJF Research Group “Nanophysique et Semiconducteurs” Dept. de Recherche Fondamentale sur la Matière Condensée, SP2M/PSC CEA - Grenoble, 17 rue des Martyrs, 38054 - Grenoble cedex 9, France.
D. Jalabert
Affiliation:
CEA / CNRS / UJF Research Group “Nanophysique et Semiconducteurs” Dept. de Recherche Fondamentale sur la Matière Condensée, SP2M/PSC CEA - Grenoble, 17 rue des Martyrs, 38054 - Grenoble cedex 9, France.
E. Monroy
Affiliation:
CEA / CNRS / UJF Research Group “Nanophysique et Semiconducteurs” Dept. de Recherche Fondamentale sur la Matière Condensée, SP2M/PSC CEA - Grenoble, 17 rue des Martyrs, 38054 - Grenoble cedex 9, France.
C. Adelmann
Affiliation:
CEA / CNRS / UJF Research Group “Nanophysique et Semiconducteurs” Dept. de Recherche Fondamentale sur la Matière Condensée, SP2M/PSC CEA - Grenoble, 17 rue des Martyrs, 38054 - Grenoble cedex 9, France.
B. Daudin.
Affiliation:
CEA / CNRS / UJF Research Group “Nanophysique et Semiconducteurs” Dept. de Recherche Fondamentale sur la Matière Condensée, SP2M/PSC CEA - Grenoble, 17 rue des Martyrs, 38054 - Grenoble cedex 9, France.
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Abstract

We propose a new procedure to grow GaN quantum dots (QDs) on AlN by using the Ga surfactant effect in plasma-assisted molecular beam epitaxy. Self-formed GaN islands were spontaneously generated under vacuum from a GaN 2D layer grown under Ga-rich conditions. Island characteristics (size and density) are studied as a function of the GaN coverage. We demonstrate that the QD density can be controlled in the 1010 cm−2 to 2 × 1011 cm−2 range. It is shown that beyond a given GaN thickness there is a coexistence between elastic and plastic relaxation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 743: Symposium L – GaN and Related Alloys , 2002 , L8.8
Copyright
Copyright © Materials Research Society 2003

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References

REFERENCES

1 Daudin, B., Widmann, F., Feuillet, G., Samson, Y., Arlery, M. and Rouvière, J.L., Phys. Rev. B 56, 7069 (1997).Google Scholar
2 Guha, S., Madhukar, A. and Rajkuma, K. C., Appl. Phys. Lett. 57, 2110 (1990).Google Scholar
3 Varma, S., Reaves, C.M., Bressler-Hill, V., Den Baars, S. P. and Weinberg, W. H., Surf. Sci. 393, 24 (1997).Google Scholar
4 Mula, G., Adelmann, C., Moehl, S., Oullier, J. and Daudin, B., Phys. Rev. B 64, 195406 (2001).Google Scholar
5 Adelmann, C., Gogneau, N., Sarigiannidou, E., Rouvière, J. L. and Daudin, B., Appl. Phys. Lett. 81, 3064 (2002).Google Scholar
6 Adelmann, C. et al, unpublished.Google Scholar
7 Kern, R. and Müller, P., Surf. Sci. 392, 103 (1997).Google Scholar