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Formation of Multilayer SiO2- SiOx Heterostructures by Control of Reaction Pathways in Remote PECVD

Published online by Cambridge University Press:  21 February 2011

D. V. Tsu ,
S. S. Kim ,
J. A. Theil ,
Cheng Wang  and
G. Lucovsky
D. V. Tsu
Affiliation:
Departments of Physics, and Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695–8202
S. S. Kim
Affiliation:
Departments of Physics, and Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695–8202
J. A. Theil
Affiliation:
Departments of Physics, and Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695–8202
Cheng Wang
Affiliation:
Departments of Physics, and Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695–8202
G. Lucovsky
Affiliation:
Departments of Physics, and Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695–8202
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Abstract

We have deposited thin films of silicon dioxide, SiO2, and amorphous silicon, a- Si, by remote Plasma-Enhanced Chemical-Vapor Deposition (Remote PECVD), and have extended this process to the deposition of silicon suboxides, SiOx, 0<x<2. Heterostructures, comprised of alternating layers of SiO 2, and SiOx, x∼1, have been deposited by electronically controlling the flow of charged particles from the plasmageneration region into the deposition chamber, without interrupting the flow of process gases. We discuss the electrical properties of these heterojunction structures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 165 , 1989 , 209
Copyright
Copyright © Materials Research Society 1990

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References

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