Hostname: page-component-745bb68f8f-v2bm5 Total loading time: 0 Render date: 2025-01-27T02:50:32.119Z Has data issue: false hasContentIssue false
  • English
  • Français

Formation Mechanism of Metal-Oxides on Plasma-Exposed Wsi/Poly Si Gate Stacks

Published online by Cambridge University Press:  10 February 2011

Ziyuan Liu ,
Y. Kawashima ,
A. Komatsu ,
T. Hamada ,
H. Kawano  and
K. Shiotani
Ziyuan Liu
Affiliation:
Device Analysis Technology Labs., NEC Corp., Kawasaki 211–8666, JAPAN
Y. Kawashima
Affiliation:
Device Analysis Technology Labs., NEC Corp., Kawasaki 211–8666, JAPAN
A. Komatsu
Affiliation:
NEC Hiroshima Corp., Higashihiroshima 739–01, JAPAN
T. Hamada
Affiliation:
Device Analysis Technology Labs., NEC Corp., Kawasaki 211–8666, JAPAN
H. Kawano
Affiliation:
Device Analysis Technology Labs., NEC Corp., Kawasaki 211–8666, JAPAN
K. Shiotani
Affiliation:
Device Analysis Technology Labs., NEC Corp., Kawasaki 211–8666, JAPAN
Get access

Abstract

The formation mechanism of deformed tungsten oxides (WOx, x=2,3) on WSix/poly Si gate stacks has been investigated. It was revealed that plasma etching process introduced oxygen impurity into WSix surface and caused the WOx formation during the subsequent thermal oxidation. WSix films preferred corientation were found to be stable in the oxidation process after plasma etching process.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 564: Symposium N – Advanced Interconnects and Contacts , 1999 , 189
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Zirinsky, S., Hammer, W., d'Heurle, F. and Baglin, J., Appl. Phys. Lett. 33, p. 76 (1978).10.1063/1.90151Google Scholar
2. Mohammadi, F., Saraswat, K. C. and Meindl, J. D., Appi. Phys. Lett. 35, p. 529 (1979).10.1063/1.91197Google Scholar
3. Mashiko, Y., Ohsaki, A., Okamoto, T., Fukumoto, K. and Koyama, H., Jpn. J. Appi. Phys. 35, p. 584 (1996).10.1143/JJAP.35.584Google Scholar
4. Baglin, J., d'Heurle, F. and Pwtersson, C., J. Appl. Phys. 54, p. 1849 (1983).10.1063/1.332821Google Scholar
5. Lee, C. M., Han, S. B. and Im, H. B. and Lee, J. G., J. Appl. Phys. 70, p. 1742 (1991).10.1063/1.349514Google Scholar
6. Sasana, D. K., Morgan, A. E., Norcott, M. H. and Nailk, S., J. Appl. Phys. 63, p. 2830 (1987).Google Scholar
7. Fonash, S. J., J. Electronchem. Soc. 137, p. 3885 (1990).10.1149/1.2086322Google Scholar
8. Kiriyov, D., Cooper, C. B., Ill and Powell, R. A., J. Vac. Sci. & Technol. B4, p. 1316 (1986).Google Scholar
9. Beyers, R., J. Appl. Phys. 56, p. 147 (1984).10.1063/1.333738Google Scholar