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Flip Chip Mounting for Improved Thermal Management of AlGaN/GaN HFETs

Published online by Cambridge University Press:  01 February 2011

Hangfeng Ji
Affiliation:
[email protected], University of Bristol, Physics, H.H. Wills Physics Laboratory, University of Bristol, Tyndall Avenue, Bristol, Avon, BS8 1TL, United Kingdom, +44-117-9288750
Andrei Sarua
Affiliation:
[email protected], University of Bristol, H.H. Wills Physics Laboratory, United Kingdom
Martin Kuball
Affiliation:
[email protected], University of Bristol, H.H. Wills Physics Laboratory, United Kingdom
Jo Das
Affiliation:
[email protected], Interuniversity Micro Electronics Center (IMEC), Microsystems, Components and Packaging Division, Belgium
Wouter Ruythooren
Affiliation:
[email protected], Interuniversity Micro Electronics Center (IMEC), Microsystems, Components and Packaging Division, Belgium
Marianne Germain
Affiliation:
[email protected], Interuniversity Micro Electronics Center (IMEC), Microsystems, Components and Packaging Division, Belgium
Gustaaf Borghs
Affiliation:
[email protected], Interuniversity Micro Electronics Center (IMEC), Microsystems, Components and Packaging Division, Belgium
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Abstract

We report on a temperature study of flip-chip mounted multi-finger AlGaN/GaN heterostructure field effect transistors (HFETs) using micro-Raman spectroscopy and infrared (IR) thermography. Flip-chip mounting can be used to improve thermal device management, in particular, for devices grown on low thermal conductivity substrates such as sapphire. In this study, we compare two flip-chip mounted HFETs of different flip-chip contact bump layout designs and a non flip-chip mounted HFET. Both temperature measurements and 3D temperature simulations are presented. The results show that minimizing the distance between the bumps and the active area of the HFET is essential for obtaining a low device operating temperature.

Type
Research Article
Copyright
Copyright © Materials Research Society 2006

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References

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