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Finite Carrier Confinement and Biexcitonic Complexes in Self-Assembled Inas Quantum Dots

Published online by Cambridge University Press:  10 February 2011

A. Jaeger ,
T. Mankad ,
W. V. Schoenfeld ,
T. Lundstrom  and
P. M. Petroff
A. Jaeger
Affiliation:
Materials Department, University of California, Santa Barbara, California 93117, USA
T. Mankad
Affiliation:
Materials Department, University of California, Santa Barbara, California 93117, USA
W. V. Schoenfeld
Affiliation:
Materials Department, University of California, Santa Barbara, California 93117, USA
T. Lundstrom
Affiliation:
Materials Department, University of California, Santa Barbara, California 93117, USA
P. M. Petroff
Affiliation:
Materials Department, University of California, Santa Barbara, California 93117, USA
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Abstract

The luminescence properties of a single lnAs self-assembled quantum dot (QD) are studied by confocal scanning optical microscopy at low temperature. The observation of single QDs has been accomplished by epitaxial growth of QDs samples with low QD density (less than one QD per μm2) required by the diffraction limited spatial resolution of the microscope. In thick QDs with large confinement energies biexciton binding energies of up to 5.0 meV are found, while in thin and more weakly confined QDs the electron wavefunction penetrates into the surrounding barriers causing reduced biexciton binding energies of less than 2.0 meV. This result can be understood in terms of theoretical calculations of biexcitonic complexes in QDs with finite potential barriers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 583 , 1999 , 271
Copyright
Copyright © Materials Research Society 2000

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References

REFERENCES

[1]Huffaker, D., Park, G., Zou, Z., Shchekin, O. B., and Deppe, D. G., Appl. Phys. Lett. 73, 2564 (1998)Google Scholar
[2]Lundstrom, T., Schoenfeld, W. V., Lee, H., Petroff, P. M., Science 286, 2312 (1999)Google Scholar
[3]Brunner, K., Abstreiter, G., Bohm, G., Trankle, G., Weimann, G., Phys. Rev. Lett. 73, 1138 (1994)Google Scholar
[4]Gammon, D., Snow, E. S., Shanabrook, B. V., Katzer, D. S., Park, D., Phys. Rev. Lett. 76, 3005 (1996)Google Scholar
[5]Dekel, E., Gershoni, D., Ehrenfreund, E., Spektor, D., Garcia, J. M., Petroff, P. M., Phys. Rev. Lett. 80, 4991 (1998)Google Scholar
[6]Bayer, M., Gutbrod, T., Forchel, A., Kulakovskii, V. D., Gorbunov, A., Michel, M., Steffen, R., Wang, K. H., Phys. Rev. B 58, 4740 (1998)Google Scholar
[7]Hohenester, U., Rossi, F., Molinari, E., to be publishedGoogle Scholar
[8]Landin, L., Miller, M. S., Pistol, M.-E., Pryor, C. E., Samuelson, L., Science 280, 262 (1998)Google Scholar
[9]Hu, Y. Z., Koch, S. W., Lindberg, M., Peyghambarian, N., Pollock, E. L., Abraham, F. F., Phys. Rev. Lett. 64, 1805 (1990); Y. Z. Hu, M. Lindberg, S. W. Koch, Phys. Rev. B 42, 1713 (1990)Google Scholar
[10]Nair, S. V., Takagahara, T., Phys. Rev. B 53, R10516 (1996); 55, 5153 (1997)Google Scholar
[11]Tsuchiya, T., to be published in Physica EGoogle Scholar
[12]Takagahara, T., Phys. Rev. B 39, 10206 (1989)Google Scholar
[13]Leonard, D., Pond, K., Petroff, P.M., Phys. Rev. B 50, 11687 (1994)Google Scholar
[14]Schmidt, K. H., Medeiros-Ribeiro, G., Garcia, J. M., Petroff, P. M., Appl. Phys. Lett. 70, 1727 (1997); K. H. Schmidt, G. Medeiros-Ribeiro, U. Kunze, G. Abstreiter, M. Hagn, P. M. Petroff, J. Appl. Phys. 84, 4268 (1998)Google Scholar
[15]Lelong, P., Bastard, G., Solid State Comm. 98, 819 (1996)Google Scholar
[16]Chavez-Pirson, A., Temmyo, J., Kamada, H., Gotoh, H., Ando, H., Appl. Phys. Lett. 72, 3494 (1998)Google Scholar
[17]Lowitsch, M., Rabe, M., Kreller, F., Henneberger, F., Appl. Phys. Lett. 74, 2489 (1999)Google Scholar
[18]Dekel, E., Gershoni, D., Ehrenfreund, E., Garcia, J. M., Petroff, P. M., to be publishedGoogle Scholar
[19]Kegel, I., Metzger, T. H., Lorke, A., Peisl, J., Stangl, J., Bauer, G., Garcia, J. M., Petroff, P. M., submitted to ScienceGoogle Scholar
[20]Garcia, J. M., Mankad, T., Holtz, P. O., Wellmann, P. J., Petroff, P.M., Appl. Phys. Lett. 72, 3172 (1998)Google Scholar