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Film Conductivity Controlled Variation of the Amplitude Distribution of High-temperature Resonators

Published online by Cambridge University Press:  20 January 2011

Silja Schmidtchen ,
Denny Richter ,
Han Xia  and
Holger Fritze
Silja Schmidtchen
Affiliation:
Institute of Energy Research and Physical Technologies and Energy Research Center Niedersachsen, TU Clausthal, 38640 Goslar, Germany
Denny Richter
Affiliation:
Institute of Energy Research and Physical Technologies and Energy Research Center Niedersachsen, TU Clausthal, 38640 Goslar, Germany
Han Xia
Affiliation:
Institute of Energy Research and Physical Technologies and Energy Research Center Niedersachsen, TU Clausthal, 38640 Goslar, Germany
Holger Fritze
Affiliation:
Institute of Energy Research and Physical Technologies and Energy Research Center Niedersachsen, TU Clausthal, 38640 Goslar, Germany
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Abstract

High-temperature measurements of the spatial distribution of the displacement characteristics of a thickness shear mode langasite (La3Ga5SiO14) resonator are obtained using a laser Doppler interferometer. Thereby, the resonator is excited in the fundamental mode and the third overtone. Further, the resonator is coated with a gas sensitive CeO2-x film which exceeds the metal electrode. In reducing atmospheres the conductivity of the film increases and induces an increase of the effective electrode area. This effect leads to a broadening of the mechanical displacement distribution. The latter depends strongly on the size of the excited part of the resonator which is determined by the effective size of the electrodes. The direct determination of the mechanical displacement at different oxygen partial pressures confirms a model as derived from the electrical impedance of resonator devices [1]. Further, information about the mass sensitivity distribution of resonators is obtained since the property is directly proportional to the amplitude.

Keywords

piezoelectricelectrical propertiesthin film
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1299: Symposium S – Microelectromechanical Systems—Materials and Devices IV , 2011 , mrsf10-1299-s05-04
Copyright
Copyright © Materials Research Society 2011

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References

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