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Field Emission Properties of Ion Beam Synthesized SiC/Si Heterostructures by MEVVA Implantation

Published online by Cambridge University Press:  10 February 2011

Dihu Chen ,
S. P. Wong ,
W.Y. Cheung ,
E.Z. Luo ,
W. Wu ,
J.B. Xu ,
I.H. Wilson  and
R.W.M. Kwok
Dihu Chen
Affiliation:
Department of Electronic Engineering and Materials Science & Technology Research Centre, The Chinese University of Hong Kong, Shatin, Hong Kong China
S. P. Wong
Affiliation:
Department of Electronic Engineering and Materials Science & Technology Research Centre, The Chinese University of Hong Kong, Shatin, Hong Kong China
W.Y. Cheung
Affiliation:
Department of Electronic Engineering and Materials Science & Technology Research Centre, The Chinese University of Hong Kong, Shatin, Hong Kong China
E.Z. Luo
Affiliation:
Department of Electronic Engineering and Materials Science & Technology Research Centre, The Chinese University of Hong Kong, Shatin, Hong Kong China
W. Wu
Affiliation:
Department of Electronic Engineering and Materials Science & Technology Research Centre, The Chinese University of Hong Kong, Shatin, Hong Kong China
J.B. Xu
Affiliation:
Department of Electronic Engineering and Materials Science & Technology Research Centre, The Chinese University of Hong Kong, Shatin, Hong Kong China
I.H. Wilson
Affiliation:
Department of Electronic Engineering and Materials Science & Technology Research Centre, The Chinese University of Hong Kong, Shatin, Hong Kong China
R.W.M. Kwok
Affiliation:
Department of Chemistry and Materials Science & Technology Research Centre, The Chinese University of Hong Kong, Shatin, Hong Kong China
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Abstract

Planar SiC/Si heterostructures were formed by high dose carbon implantation using a metal vapor vacuum arc ion source. The variations of the field emission properties with the implant dose and annealing conditions were studied. A remarkably low turn-on field of IV/μm was observed from a sample implanted at 35 keV to a dose of 1.0×1018 cm−2 with subsequent annealing in nitrogen at 1200°C for 2h. The chemical composition depth profiles were determined from x-ray photoelectron spectroscopy and the surface morphology was observed by atomic force microscopy. The formation of a thin surface stoichiometric SiC layer and the formation of densely distributed small protrusions on the surface are believed to be the two factors responsible for the efficient electron field emission.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 509: Symposium C – Materials Issues in Vacuum Microelectronics , 1998 , 199
Copyright
Copyright © Materials Research Society 1998

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