Published online by Cambridge University Press: 21 March 2011
Temperature dependence of thermoelectric power and resistivity was measured for the β-FeSi2 based cast alloys on which n-type Co doping was performed with or without Cu addition. The Cu-free alloy shows a homogeneous eutectic microstructure consisting of metallic phases α-FeSi2 and ε-FeSi, while the Cu-doped alloy has a quite heterogeneous microstructure dominated by coarse ε-FeSi dendrites in the α-FeSi2 matrix. Adequate heat treatment condition for the semiconductor β-FeSi2 phase formation has been evaluated as annealing at 923 K for less than 50 h, which is lower in temperature and shorter in duration than previously reported for alloys prepared by powder metallurgy. The resistivity measurement with the aid of microstructure observation has revealed that the β-FeSi2 formation takes place and almost finishes at very early stage of annealing process. Addition of Cu effectively promotes the β-FeSi2 formation rate of the present cast alloys.
Graduate Student, now with Mistubishi Heavy Industries, Ltd., 5–717–1 Fukahori-machi, Nagasaki 851–0392, Japan.