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Fe-Centers in GaN as Candidates for Spintronics Applications

Published online by Cambridge University Press:  01 February 2011

Enno Malguth ,
Axel Hoffmann ,
Matthew Phillips  and
Wolfgang Gehlhoff
Enno Malguth
Affiliation:
[email protected], University of Technology Sydney, Microstructural Analysis Unit, Level 1,, Building 4,, Thomas St,, Ultimo, NSW, 2007, Australia
Axel Hoffmann
Affiliation:
[email protected], Technische Universität Berlin, Institut für Festkörperphysik, Germany
Matthew Phillips
Affiliation:
[email protected], University of Technology, Sydney, Microstructural Analysis Unit, Australia
Wolfgang Gehlhoff
Affiliation:
[email protected], Technische Universität Berlin, Institut für Festkörperphysik
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Abstract

The potential use of Fe doped GaN for spintronics applications requires a complete understanding of the electronic structure of Fe in all of its charge states. To address these issues, a set of 500 µm thick freestanding HVPE grown GaN:Fe crystals with different Fe-concentration levels ranging from 5×1017 to 2×1020 was studied by means of photoluminescence, photoluminescence excitation (PLE) and Fourier transform infrared (FTIR) transmission experiments. The Fe3+/2+ charge transfer (CT) level was determined to be at 2.86 ± 0.01 eV above the valence band maximum considerably lower than the previously reported value of 3.17 ± 0.10 eV. A bound state of the form (Fe2+, hVB) with a binding energy of 50 ± 10 meV has been established as an excited state of Fe3+. FTIR transmission measurements revealed an internal (5E-5T2) transition of Fe2+ around 400 eV which, until now, was believed to be degenerate with the conduction band. Consequently, a second CT band was detected in PLE spectra.

Keywords

III-VFeelectronic structure
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 892 , 2005 , 0892-FF07-05-EE05-05
Copyright
Copyright © Materials Research Society 2006

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