Hostname: page-component-586b7cd67f-2brh9 Total loading time: 0 Render date: 2024-12-01T09:05:40.854Z Has data issue: false hasContentIssue false
  • English
  • Français

Fast Deposition of Highly Crystallized Microcrystalline Si Films Utilizing a High-Density Microwave Plasma Source for Si Thin Film Solar Cells

Published online by Cambridge University Press:  01 February 2011

Haijun Jia ,
Hajime Shirai  and
Michio Kondo
Haijun Jia
Affiliation:
[email protected], National Institute of Advanced Industrial Science and Technology (AIST), Research Center for Photovoltaics, Central 2, 1-1-1 Umezono, Tsukuba, Ibara, 305-8568, Japan, 81-29-861-3367
Hajime Shirai
Affiliation:
[email protected], Saitama University, Graduate School of Science and Engineering, 255 Shimo-Okubo, Sakura, Saitama, 338-8570, Japan
Michio Kondo
Affiliation:
[email protected], National Institute of Advanced Industrial Science and Technology (AIST), Research Center for Photovoltaics, Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki, 305-8568, Japan
Get access

Abstract

In this work, we investigate the influences of source gas supply method and dc substrate bias on the deposition rate as well as structural properties of μc-Si films and demonstrate the high rate synthesis of highly crystallized μc-Si films with improved film density by using a high-density and low-temperature microwave plasma source. A high flux of SiH3 and atomic hydrogen on film growing surface achieved through adjusting SiH4 gas supply configuration is effective for the fast deposition of highly crystallized μc-Si films and for the improvement of film mass density. Appropriate ion bombardment under moderate negative dc substrate bias along with the suppression of contributions of detrimental species to film growth also account for the improvement in properties of resulting films. As a consequence, a very fast deposition rate of ~65 Å/s was achieved with a high Raman crystallinity Ic/Ia>3 and a low defect density of (1-2)×1016 cm-3 despite a high silane concentration of 67%.

Keywords

Siplasma-enhanced CVD (PECVD) (deposition)film
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 910: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology – 2006 , 2006 , 0910-A13-03
Copyright
Copyright © Materials Research Society 2006

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Matsui, T., Kondo, M., and Matsuda, A., Jpn. J. Appl. Phys. 42, L901 (2003).Google Scholar
2. Shirai, H., Sakuma, Y. and Ueyama, H., Thin Solid Films 345, 7 (1999).Google Scholar
3. Nunomura, S., Akatsuda, H. and Kondo, M., ICRP-6/SPP-23, Sendai, Japan, 2006, P–3B Google Scholar
4. Jia, H., Saha, J. K. and Shirai, H., Jpn. J. App. Phys. 45, 666 (2006).Google Scholar