Hostname: page-component-78c5997874-v9fdk Total loading time: 0 Render date: 2024-11-02T23:34:17.140Z Has data issue: false hasContentIssue false
  • English
  • Français

Fabrication of Organic Thin Films for Copper Diffusion Barrier Layers Using Molecular Layer Deposition

Published online by Cambridge University Press:  01 February 2011

Stacey Bent ,
Paul William Loscutoff  and
Scott Clendenning
Stacey Bent
Affiliation:
[email protected], Stanford University, Chemical Engineering, Stanford, California, United States
Paul William Loscutoff
Affiliation:
[email protected], Intel Corporation, Hillsboro, Oregon, United States
Scott Clendenning
Affiliation:
[email protected], Stanford University, Chemical Engineering, Stanford, California, United States
Get access

Abstract

Device scaling predicts that copper barrier layers of under 3 nm in thickness will soon be needed in back-end processing for integrated circuits, motivating the development of new barrier layer materials. In this work, nanoscale organic thin films for use as possible copper diffusion barrier layers are deposited by molecular layer deposition (MLD) utilizing a series of self-limiting reactions of organic molecules. MLD can be used to tailor film properties to optimize desirable barrier properties, including density, copper surface adhesion, thermal stability, and low copper diffusion. Three systems are examined as copper diffusion barriers, a polyurea film deposited by the reaction of 1,4-phenylene diisocyanate (PDIC) and ethylenediamine (ED), a polyurea film with a sulfide-modified backbone, and a polythiourea films using a modified coupling chemistry. Following deposition of the MLD films, copper is sputter deposited. The copper diffusion barrier properties of the film are tested through adhesion and annealing tests, including 4-point bend testing and TEM imaging to examine the level of copper penetration. The promise and challenges of MLD-formed organic copper diffusion barriers will be discussed.

Keywords

atomic layer depositionbarrier layerorganic
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1249: Symposia E/F – Advanced Interconnects and Chemical Mechanical Planarization for Micro-and Nanoelectronics , 2010 , 1249-F02-03
Copyright
Copyright © Materials Research Society 2010

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] International Technology Roadmap for Semiconductors: Emerging Materials (2009)Google Scholar
[2] Caro, A. M. Maes, G. Borghs, G. et al. , Microelectron. Eng. 85 (10), 2047–2050 (2008).Google Scholar
[3] Gandhi, D. D. Lane, M. Zhou, Y. et al. , Nature 447 (7142), 299–U292 (2007).Google Scholar
[4] Ganesan, P. G. Singh, A. P. and Ramanath, G. Appl. Phys. Lett. 85 (4), 579–581 (2004).Google Scholar
[5] Dube, A. Sharma, M. Ma, P. F. et al. , J. Phys. Chem. C111 (29), 11045–11058 (2007).Google Scholar
[6] Murthy, B. R. Yee, W. M. Krishnamoorthy, A. et al. , Electrochem. Solid-State Lett. 9 (7), F61–F63 (2006).Google Scholar
[7] Han, W. K. Hwang, G. H. Hong, S. J. et al. , Appl. Surf. Sci. 256 (8), 2649–2653 (2010).Google Scholar
[8] George, S. M. Yoon, B. and Dameron, A. A. Acc. Chem. Res. 42 (4), 498–508 (2009).Google Scholar
[9] Ritala, M. and Leskela, M. in Handbook of Thin Film Materials, edited by Nalwa, H. S. (Academic Press, San Diego, 2002), Vol. 1.Google Scholar
[10] Loscutoff, P. W. Zhou, H. Clendenning, S. B. et al. , ACS Nano 4 (1), 331–341 (2010).Google Scholar
[11] Ma, Q. J. Mater. Res. 12 (3), 840–845 (1997).Google Scholar
[12] Coleman, M. M. Sobkowiak, M. Pehlert, G. J. et al. , Macromol. Chem. Phys. 198 (1), 117–136 (1997).Google Scholar
[13] Garg, S. Singh, B. Liu, X. et al. , J. Phys. Chem. Lett. 1 (1), 336–340 (2010).Google Scholar