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Fabrication of Organic Thin Film Transistors Using Low Temperature, Soluble Silicon Oxide as the Gate Dielectrics

Published online by Cambridge University Press:  26 February 2011

Jeng-Hua Wei ,
HorngJiunn Lin  and
Ying-Ren Chen
Jeng-Hua Wei
Affiliation:
[email protected], Ching Yun University, Electronic Engineering, 229, Chien Hsin Rd., Jung-Li, Taiwan, 320, Taiwan
HorngJiunn Lin
Affiliation:
[email protected], Ching Yun University, Electronic Engineering, 229, Chien Hsin Rd., Jung-Li, Taiwan, 320, Taiwan
Ying-Ren Chen
Affiliation:
[email protected], Ching Yun University, Electronic Engineering, 229, Chien Hsin Rd., Jung-Li, Taiwan, 320, Taiwan
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Abstract

In this paper, a unique water-based, liquid phase deposited silicon oxide (LPD SiO2) is adapted to the fabrication process of the organic thin film transistor (OTFT). Through the use of this process, an OTFT with a silicon oxide gate insulator is successfully fabricated at 100°C or less. At this low process temperature, the SiO2 functions efficiently as a gate dielectric with the breakdown field being larger than 5 MV/cm, the leakage current being near 1 pA/um2 with a gate bias of 20 V and the surface roughness being less than 1nm. Due to the high quality silicon oxide, the oxide-gated OTFT shows the low threshold voltage (-1 ∼ -2V) and medium on/off current ratio (∼1000). Because this oxide is a water-based process, it is highly resistant to the following soluble semiconductor material and its solvent.

Keywords

liquidoxideorganic
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 965: Symposium S – Organic Electronics – Materials, Devices and Applications , 2006 , 0965-S06-01
Copyright
Copyright © Materials Research Society 2007

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References

REFERENCES

[1] Bao, Z., Adv. Mater No 3, 227 (2000).Google Scholar
[2] Zschieschang, U., Klank, H., Halik, M., Schmid, G., and Dehm, C., Adv. Mater No 14,1147 (2003).Google Scholar
[3] Klank, H., Halik, M., Zschieschang, U., Eder, F., Schmid, G., and Dehm, C., Appl. Phys. Lett., 82, 4715 (2003).Google Scholar
[4] Shaw, J. M., Seidler, P. F., IBM J. Res. & Dev. 45, 3 (2001).Google Scholar
[5] Dimitrakopoulos, C. D. and Mascaro, D. J., IBM J. Res. & Dev. 45, 11 (2001).Google Scholar
[6] Chou, J. S. and Lee, S. C., Appl. Phys. Lett., 64, 1971(1994).Google Scholar
[7] Wei, J. H. and Lee, S. C., J. Electrochem. Soc., 144, 1870 (1997).Google Scholar
[8] Sze, S.M., “Physics of semiconductor devices”, Wiley, New York, 1981.Google Scholar
[9] Lo, P.Y., Pei, Z., Hwang, J.J. and Chan, Y.J., submitted to the 2005 International Conference on Solid State Devices and Materials (SSDM 2005).Google Scholar
[10] Snow, E. S., Campbell, P. M., Ancona, M. G. and Novak, J. P. Appl. Phys. Lett., 86, 033105 (2005).Google Scholar
[11] Bo, X. –Z., Lee, C. Y., Strano, M. S.. Goldfinger, M., Nuckolls, C., and Blanchet, G. B., Appl. Phys. Lett., 86, 182102 (2005).Google Scholar
[12] Duan, X., Wu, C., Sahi, W., Chen, J., Parce, J. W., Empedocles, S. and Goldman, J. L., Nature, 425, 274 (2003).Google Scholar
[13] Mitzi, D. B., Kosber, L. L., Murry, C. E., Copel, M., Afzali, A., Nature 428, 299 (2004).Google Scholar