Hostname: page-component-586b7cd67f-l7hp2 Total loading time: 0 Render date: 2024-11-24T06:41:28.081Z Has data issue: false hasContentIssue false
  • English
  • Français

Fabrication of Nitrided Mask on GaAs surface and Its Machinability for STM lithography

Published online by Cambridge University Press:  01 February 2011

Yo Yamamoto ,
Sota MATSUOKA ,
Toshiyuki Kondo ,
Takahiro Maruyama  and
Shigeya Naritsuka
Yo Yamamoto
Affiliation:
[email protected], Meijo Univ., 21stCentury COE Program, 1-501Shiogamagudhi,Tempakuku, NAGOYA, N/A, N/A, Japan
Sota MATSUOKA
Affiliation:
[email protected], Meijo Univ., Dept. of Matterrials Science and Engineering, Japan
Toshiyuki Kondo
Affiliation:
[email protected], Meijo Univ., Dept. of Matterrials Science and Engineering, Japan
Takahiro Maruyama
Affiliation:
[email protected]
Shigeya Naritsuka
Affiliation:
[email protected], Japan
Get access

Abstract

A nitridation mask on a GaAs surface was prepared using RF-MBE and its machinability by STM lithography was studied. A 5.2 nm thick crystal-like layer was formed at 350°C, and was modified by STM at a sample bias of ±80V with good size reliability, which was sufficiently fine for realizing dislocation-free heteroepitaxial growth of GaAs / Si. The mask was maintained up to 620°C under As flux exposure at 1.5 × 10−4 Pa.

Keywords

epitaxyscanning probe microscopy (SPM)crystal growth
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 891: Symposium EE – Progress in Semiconductor Materials V – Novel Materials and Electronics and Optoelectronic Applications , 2005 , 0891-EE03-23
Copyright
Copyright © Materials Research Society 2006

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Nishinaga, T., Nakano, T. and Zhang, S., Jpn. J. Appl. Phys. 27 (1988) L694.Google Scholar
[2] Zhang, S. and Nishinaga, T., J. Cryst. Growth. 99 (1990) 292.10.1016/0022-0248(90)90530-XGoogle Scholar
[3] Suzuki, Y. and Nishinaga, T., Jpn. J. Appl. Phys. 28 (1989) 440.10.1143/JJAP.28.440Google Scholar
[4] Bargman, R., Bauser, E. and Werner, J. H., Appl. Phys. Lett. 57 (1990) 351.Google Scholar
[5] Bargman, R., J. Cryst. Growth 110 (1991) 823.10.1016/0022-0248(91)90640-QGoogle Scholar
[6] Zhang, S. and Nishinaga, T., Jpn. J. Appl. Phys. 29 (1990) 545.Google Scholar
[7] Yamamoto, Y., Kondo, T., Matsuoka, S., Maruyama, T. and Naritsuka, S., Proc. of 24th Electronic Materials Symposium, (2005) K13.Google Scholar
[8] Naritsuka, S. ‘Studies of High Quality InP Layers Heteroepitaxially Grown on Si Substrates by Epitaxial Lateral Overgrowth’, Doctoral thesis, University of Tokyo, (1995).Google Scholar