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Fabrication of Crystallized Si Film Deposited on a Polycrystalline YSZ Film/Glass Substrate at 500°C

Published online by Cambridge University Press:  01 February 2011

Susumu Horita ,
Keisuke Kanazawa ,
Kensuke Nishioka ,
Koichi Higashimine  and
Mikio Koyano
Susumu Horita
Affiliation:
[email protected], Japan Advanced Institute of Science and Technology, School of Materials Science, 1-1, Asahidai, Nomi, Ishikawa, 923-1292, Japan, +81-761-51-1561, +81-761-51-1149
Keisuke Kanazawa
Affiliation:
[email protected], Japan Advanced Institute of Science and Technology, School of Materials Science, 1-1, Asahidai, Nomi, Ishikawa, 923-1292, Japan
Kensuke Nishioka
Affiliation:
[email protected], Japan Advanced Institute of Science and Technology, School of Materials Science, 1-1, Asahidai, Nomi, Ishikawa, 923-1292, Japan
Koichi Higashimine
Affiliation:
[email protected], Japan Advanced Institute of Science and Technology, School of Materials Science, 1-1, Asahidai, Nomi, Ishikawa, 923-1292, Japan
Mikio Koyano
Affiliation:
[email protected], Japan Advanced Institute of Science and Technology, School of Materials Science, 1-1, Asahidai, Nomi, Ishikawa, 923-1292, Japan
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Abstract

We used a polycrystalline YSZ film deposited on the quartz substrate as a seed layer to enhance crystallization of the Si film deposited on it. The YSZ film was deposited by reactive sputtering at less than 50°C and the preferential orientation was (111). The 60-nm-thick Si film was deposited by e-beam evaporation method on the substrate with and without the YSZ film. It was found that the crystallization of the Si film deposited on the YSZ film occurs but not without the YSZ film at the temperature of 515°C. The SEM image of the Secco-etched Si film showed that the crystallized Si film consisted of ~50-nm-size grains and, from the TEM image, it is supposed that the Si grains are grown directly from the YSZ film.

Keywords

Sicrystal growthpolycrystal
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 910: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology – 2006 , 2006 , 0910-A21-17
Copyright
Copyright © Materials Research Society 2006

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