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Fabrication of a p-NiO/n-Si Heterojunction Diode by UV Oxidation of Ni Deposited on n-Si

Published online by Cambridge University Press:  12 April 2013

Dongyuan Zhang ,
Kazuo Uchida  and
Shinji Nozaki
Dongyuan Zhang
Affiliation:
Graduate School of Informatics and Engineering, The University of Electro-Communications, 1-5-1 Chofugaoka, Chofu-shi, Tokyo 182-8585, Japan
Kazuo Uchida
Affiliation:
Graduate School of Informatics and Engineering, The University of Electro-Communications, 1-5-1 Chofugaoka, Chofu-shi, Tokyo 182-8585, Japan
Shinji Nozaki
Affiliation:
Graduate School of Informatics and Engineering, The University of Electro-Communications, 1-5-1 Chofugaoka, Chofu-shi, Tokyo 182-8585, Japan
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Abstract

The metallic nickel (Ni) deposited on an n-Si substrate with resistivity of 4 – 6 Ω∙cm was oxidized by the ultra-violet (UV) oxidation technique to form a p-NiO/n-Si heterojunction diode. The rectifying current-voltage (I-V) characteristic confirmed formation of a pn junction. The capacitance-voltage (C-V) characteristic further identified an abrupt p+n junction between NiO and n-Si. The photocurrent increased with the increased wavelength of laser under illumination of the diode. The voltage-dependent photocurrent suggests that the carriers generated in the depletion region of Si was effectively collected but not outside the depletion region. A low diffusion length of holes was attributed to Ni diffusion in Si caused by the substrate heating during the UV oxidation.

Keywords

oxidedevicesthin film
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1494: Symposium Z – Oxide Semiconductors and Thin Films , 2013 , pp. 305 - 309
Copyright
Copyright © Materials Research Society 2013 

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References

REFERENCES

Hwang, I., Lee, M. -J., Bae, J., Hong, S., Kim, J. -S., Choi, J., Deng, X. L., Ahn, S. -E., Kang, S.-O. and Park, B. H., IEEE Electron Device Lett. 33, 881 (2012).CrossRefGoogle Scholar
Srnanek, R., Hotovy, I., Malcher, V., Vincze, A., McPhail, D. and Littlewood, S., ASDAM 2000. The Third International EuroConference on Advanced Semiconductor Devices and Microsystems. Smolenice Castle, Slovakia, 16-18 Octber 2000, pp. 303 – 306.CrossRefGoogle Scholar
Mironova-Ulmane, N., Kuzmin, A., Steins, I., Grabis, J., Sildos, I. and Pars, M.. Jour. of Phys.: Conf. Seri. 93, 012039 (2007).Google Scholar
Choi, J-M. and Im, S., Appl. Surface Science 244, 435 (2005).CrossRefGoogle Scholar
Nishi, Y., Iwata, T. and Kimoto, T., Jpn. J. Appl. Phys. 50, 015802 (2011).CrossRefGoogle Scholar
Komsomol, Lenin Voronezh State University. Translated from Izvestiya VUZ. Fizika, No. 12, pp. 151–152, December, 1973. Original article submitted November 5, 1971; revision submitted November 9, 1972.Google Scholar
Kitagawa, H., Tanaka, S., Nakashima, H. and Yoshida, M., Journal of Electronic Materials 20, 441 (1991).CrossRefGoogle Scholar
Indusekhar, H. and Kumar, Vikram, J. Appl. Phys. 61, 1449 (1987).CrossRefGoogle Scholar